IXTK120P20T
- Mfr.Part #
- IXTK120P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 120A TO264
- Stock
- 11,484
- In Stock :
- 11,484
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTK120
- Transistor Polarity :
- P-Channel
- Max Power Dissipation :
- 1.04kW
- Case Connection :
- DRAIN
- Published :
- 2013
- Mounting Style :
- Through Hole
- DS Breakdown Voltage-Min :
- 200V
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Width :
- 5.31 mm
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 73000pF @ 25V
- Transistor Element Material :
- SILICON
- Operating Temperature (Max) :
- 150°C
- Rise Time :
- 85 ns
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 60A, 10V
- Mount :
- Through Hole
- Type :
- TrenchP Power MOSFET
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Unknown
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 28 Weeks
- Number of Elements :
- 1
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 0.03Ohm
- Operating Temperature :
- --
- Supplier Device Package :
- TO-264 (IXTK)
- Brand :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 400A
- Series :
- TrenchP™
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 200V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- Minimum Operating Temperature :
- - 55 C
- FET Type :
- P-Channel
- Product Category :
- MOSFET
- Tradename :
- TrenchP
- FET Feature :
- --
- ECCN Code :
- EAR99
- Maximum Operating Temperature :
- + 150 C
- Channel Mode :
- Enhancement
- Height :
- 26.59 mm
- Power Dissipation (Max) :
- --
- Product Status :
- Active
- Packaging :
- Tube
- Length :
- 20.29 mm
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 740nC @ 10V
- Continuous Drain Current (ID) :
- 120A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Datasheets
- IXTK120P20T

P-Channel Tube 30m Ω @ 60A, 10V 73000pF @ 25V 740nC @ 10V 200V TO-264-3, TO-264AA
IXTK120P20T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 73000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).
IXTK120P20T Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
based on its rated peak drain current 400A.
a 200V drain to source voltage (Vdss)
IXTK120P20T Applications
There are a lot of IXYS
IXTK120P20T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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