IXTK82N25P
- Mfr.Part #
- IXTK82N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 82A TO264
- Stock
- 33
- In Stock :
- 33
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 500W (Tc)
- JESD-609 Code :
- e1
- Gate Charge (Qg) (Max) @ Vgs :
- 142nC @ 10V
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 41A, 10V
- Tradename :
- PolarHT
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 82A Tc
- Product Type :
- MOSFET
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Voltage (Vdss) :
- 250V
- Fall Time (Typ) :
- 22 ns
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 250 V
- Transistor Type :
- 1 N-Channel
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Series :
- PolarHT™
- Maximum Operating Temperature :
- + 150 C
- Base Product Number :
- IXTK82
- Power Dissipation-Max :
- 500W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- Factory Lead Time :
- 28 Weeks
- Supplier Device Package :
- TO-264 (IXTK)
- Number of Channels :
- 1 Channel
- Additional Feature :
- AVALANCHE RATED
- Type :
- PolarHT Power MOSFET
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Rise Time :
- 20ns
- Element Configuration :
- Single
- Package :
- Tube
- Manufacturer :
- IXYS
- Power Dissipation :
- 500W
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Published :
- 2006
- Surface Mount :
- No
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Number of Terminals :
- 3
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 200A
- Width :
- 5.31 mm
- Terminal Form :
- THROUGH-HOLE
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 78 ns
- Minimum Operating Temperature :
- - 55 C
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-264-3, TO-264AA
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 0.035Ohm
- Subcategory :
- MOSFETs
- Drain to Source Breakdown Voltage :
- 250V
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Length :
- 20.29 mm
- FET Feature :
- --
- Mounting Style :
- Through Hole
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Height :
- 26.59 mm
- JEDEC-95 Code :
- TO-264AA
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 82A
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Datasheets
- IXTK82N25P

N-Channel Tube 35m Ω @ 41A, 10V ±20V 4800pF @ 25V 142nC @ 10V 250V TO-264-3, TO-264AA
IXTK82N25P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [82A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 78 ns.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 250 V.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTK82N25P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 78 ns
based on its rated peak drain current 200A.
a 250V drain to source voltage (Vdss)
IXTK82N25P Applications
There are a lot of IXYS
IXTK82N25P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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