IXTK60N50L2
- Mfr.Part #
- IXTK60N50L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 60A TO264
- Stock
- 697
- In Stock :
- 697
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-264AA
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 30A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 40 ns
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Pin Count :
- 3
- Maximum Operating Temperature :
- + 150 C
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Package Shape :
- RECTANGULAR
- Product Category :
- MOSFET
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Height :
- 26.59 mm
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- Published :
- 2006
- Nominal Vgs :
- 2.5 V
- Continuous Drain Current (ID) :
- 60A
- Power Dissipation-Max :
- 960W Tc
- JESD-609 Code :
- e1
- Package :
- Tube
- Mount :
- Through Hole
- Terminal Finish :
- TIN SILVER COPPER
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 24000pF @ 25V
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.1 Ω
- Number of Elements :
- 1
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 500V
- Supplier Device Package :
- TO-264 (IXTK)
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Number of Channels :
- 1 Channel
- Power Dissipation :
- 960W
- Power Dissipation (Max) :
- 960W (Tc)
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 5.31 mm
- Threshold Voltage :
- 2.5V
- Series :
- Linear L2™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- No
- RoHS :
- Details
- Product Status :
- Active
- FET Feature :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Subcategory :
- MOSFETs
- Number of Pins :
- 3
- Minimum Operating Temperature :
- - 55 C
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXTK60
- Length :
- 20.29 mm
- Pulsed Drain Current-Max (IDM) :
- 150 A
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 610nC @ 10V
- Product Type :
- MOSFET
- Mounting Style :
- Through Hole
- Reach Compliance Code :
- Compliant
- Brand :
- IXYS
- Tradename :
- Linear L2
- Channel Mode :
- Enhancement
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- Factory Lead Time :
- 17 Weeks
- Type :
- LinearL2 Power MOSFET
- Manufacturer :
- IXYS
- Package / Case :
- TO-264-3, TO-264AA
- Datasheets
- IXTK60N50L2

N-Channel Tube 100m Ω @ 30A, 10V ±30V 24000pF @ 25V 610nC @ 10V 500V TO-264-3, TO-264AA
IXTK60N50L2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 24000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.As far as peak drain current is concerned, its maximum pulsed current is 150 A.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 2.5V.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK60N50L2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 60A
based on its rated peak drain current 150 A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)
IXTK60N50L2 Applications
There are a lot of IXYS
IXTK60N50L2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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