IXTK210P10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Maximum Power Dissipation (mW) :

1040000

EU RoHS :

Compliant

Maximum Gate Threshold Voltage (V) :

4.5

Package Width :

5.13(Max)

Power Dissipation :

1.04kW

Maximum Drain Source Voltage (V) :

100

Automotive :

No

Technology :

Si

ECCN (US) :

EAR99

Maximum Gate Source Voltage (V) :

±15

Minimum Operating Temperature :

- 55 C

Qualification :

-

Maximum Gate Source Leakage Current (nA) :

200

Channel Type :

P

MSL :

-

PCB changed :

3

HTS :

8541.29.00.95

Mounting :

Through Hole

Maximum IDSS (uA) :

25

Maximum Drain Source Resistance (mOhm) :

7.5@10V

Channel Mode :

Enhancement

Typical Gate Charge @ Vgs (nC) :

740@10V

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current Id :

210A

Process Technology :

TrenchFET

Typical Input Capacitance @ Vds (pF) :

69500@25V

Typical Turn-On Delay Time (ns) :

90

Minimum Operating Temperature (°C) :

-55

Transistor Polarity :

P-Channel

Supplier Package :

TO-264AA

Configuration :

Single

Category :

Power MOSFET

Typical Gate Charge @ 10V (nC) :

740

Maximum Continuous Drain Current (A) :

210

Pin Count :

3

Number of Elements per Chip :

1

Typical Fall Time (ns) :

55

Package / Case :

TO-264-3

Typical Turn-Off Delay Time (ns) :

165

Number of Channels :

1 Channel

Maximum Operating Temperature (°C) :

150

Package Height :

26.16(Max)

Typical Rise Time (ns) :

98

Package Length :

19.96(Max)

PPAP :

No

Tab :

Tab

Mounting Style :

Through Hole