IXTK20N150

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

2500 mJ

Vgs (Max) :

±30V

Terminal Position :

Single

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

28 Weeks

Drain-source On Resistance-Max :

1Ohm

Manufacturer :

IXYS

Series :

--

Supplier Device Package :

TO-264 (IXTK)

Transistor Polarity :

N-Channel

Transistor Application :

SWITCHING

Number of Terminations :

3

Package / Case :

TO-264-3, TO-264AA

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Rds On (Max) @ Id, Vgs :

1 Ω @ 10A, 10V

Package :

Tube

Pulsed Drain Current-Max (IDM) :

50A

Published :

2012

Product Category :

MOSFET

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole

DS Breakdown Voltage-Min :

1500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

1250W Tc

Reach Compliance Code :

Unknown

Power Dissipation-Max (Abs) :

1250 W

Number of Terminals :

3

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Brand :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

20A

Vgs(th) (Max) @ Id :

4.5V @ 1mA

JEDEC-95 Code :

TO-264AA

FET Feature :

--

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Packaging :

Tube

Product Status :

Active

Surface Mount :

No

Base Product Number :

IXTK20

Power Dissipation (Max) :

1250W (Tc)

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

Drain Current-Max (Abs) (ID) :

20 A

Drain to Source Voltage (Vdss) :

1500V

Product Type :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mounting Style :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

7800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

RoHS :

Details

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ