IXTK200N10L2
- Mfr.Part #
- IXTK200N10L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 200A TO264
- Stock
- 38,992
- In Stock :
- 38,992
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Brand :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Package :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Series :
- Linear L2™
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Manufacturer :
- IXYS
- Pin Count :
- 3
- Width :
- 5.13 mm
- Tradename :
- Linear L2
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 1040W (Tc)
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- FET Feature :
- --
- RoHS :
- Compliant
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Input Capacitance :
- 23 nF
- Supplier Device Package :
- TO-264 (IXTK)
- Base Product Number :
- IXTK200
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Type :
- Linear L2 Power MOSFET
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Rise Time :
- 225 ns
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 28 Weeks
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Max Power Dissipation :
- 1.04 kW
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 100A, 10V
- Drain-source On Resistance-Max :
- 0.011Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 N-Channel
- Published :
- 2010
- JESD-609 Code :
- e1
- Channel Mode :
- Enhancement
- DS Breakdown Voltage-Min :
- 100V
- Drain to Source Voltage (Vdss) :
- 100V
- Terminal Finish :
- TIN SILVER COPPER
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 500A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 200A Tc
- Continuous Drain Current (ID) :
- 200A
- Gate Charge (Qg) (Max) @ Vgs :
- 540nC @ 10V
- Reach Compliance Code :
- Unknown
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Rds On Max :
- 11 mΩ
- Length :
- 19.96 mm
- Power Dissipation-Max :
- 1040W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Height :
- 26.16 mm
- Datasheets
- IXTK200N10L2

N-Channel Tube 11m Ω @ 100A, 10V ±20V 23000pF @ 25V 540nC @ 10V 100V TO-264-3, TO-264AA
IXTK200N10L2 Description
The IXTK200N10L2 is a high voltage, high current MOSFET designed for power electronics applications. It has a voltage rating of 1000V and a current rating of 200A, with a low on-state resistance of 0.2 mOhm. This makes it suitable for power converters, inverters, motor control, and other high-current and high-voltage circuits. The device is packaged in a TO-264 package and has a high input impedance, allowing for easy control with low-voltage signals. Its fast switching speed and ability to withstand high avalanche energy make it ideal for industrial and automotive applications where reliability and performance are critical.
IXTK200N10L2 Features
Voltage rating: 1000V
Current rating: 200A
Low on-state resistance: 0.2 mOhm
Fast switching speed
TO-264 package
High input impedance
Avalanche energy specified
IXTK200N10L2 Applications
Power converters and inverters
Motor control
Industrial and automotive applications
High current and high voltage circuits
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