IXTK180N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Number of Terminals :

3

Product Type :

MOSFET

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

10m Ω @ 90A, 10V

Reach Compliance Code :

Unknown

Brand :

IXYS

Pbfree Code :

yes

Length :

19.96 mm

RoHS :

Details

Power Dissipation-Max (Abs) :

800 W

Drain to Source Breakdown Voltage :

100V

Lead Free :

Lead Free

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

32ns

Supplier Device Package :

TO-264 (IXTK)

Element Configuration :

Single

Maximum Operating Temperature :

+ 175 C

Drain Current-Max (Abs) (ID) :

180 A

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

MSL :

-

Published :

2006

JEDEC-95 Code :

TO-264AA

Drain to Source Voltage (Vdss) :

150V

Power Dissipation-Max :

800W Tc

Continuous Drain Current Id :

180A

Terminal Position :

Single

Manufacturer :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.01 Ω

Transistor Type :

1 N-Channel

Factory Lead Time :

28 Weeks

Gate to Source Voltage (Vgs) :

20V

Configuration :

Single

Resistance :

10MOhm

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

5V @ 500µA

Turn-Off Delay Time :

150 ns

Avalanche Energy Rating (Eas) :

4000 mJ

Case Connection :

DRAIN

Threshold Voltage :

5V

Width :

5.13 mm

Channel Mode :

Enhancement

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Qualification :

-

Mount :

Through Hole

Tradename :

PolarHT

DS Breakdown Voltage-Min :

100 V

Number of Pins :

3

Power Dissipation :

800W

Power Dissipation (Max) :

800W (Tc)

Continuous Drain Current (ID) :

180A

Qualification Status :

Not Qualified

Height :

26.16 mm

Vgs (Max) :

±20V

Base Product Number :

IXTK180

Mounting Style :

Through Hole

Terminal Form :

THROUGH-HOLE

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

380 A

Channel Type :

N Channel

Mounting Type :

Through Hole

Package / Case :

TO-264-3, TO-264AA

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Type :

PolarHT Power MOSFET

Package :

Tube

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Fall Time (Typ) :

36 ns

Product Category :

MOSFET

Pin Count :

3

Series :

PolarHT™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e1