IXFT80N08

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-268

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

300W Tc

Series :

HiPerFET™

Rds On (Max) @ Id, Vgs :

9m Ω @ 40A, 10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Terminal Form :

Gull wing

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Terminals :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-268

Transistor Polarity :

N-Channel

Packaging :

Tube

Product Category :

MOSFET

ECCN Code :

EAR99

Tradename :

HyperFET

Mount :

Surface Mount

Vgs (Max) :

±20V

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

80 V

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

80V

Published :

2001

Qualification Status :

Not Qualified

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Mounting Style :

SMD/SMT

Vgs(th) (Max) @ Id :

4V @ 4mA

Drain to Source Breakdown Voltage :

80V

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Rise Time :

75ns

Subcategory :

MOSFETs

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.009Ohm

Product Type :

MOSFET

Fall Time (Typ) :

31 ns

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Minimum Operating Temperature :

- 55 C

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

95 ns

Base Product Number :

IXFT80

Power Dissipation (Max) :

300W (Tc)

Product Status :

Active

Pin Count :

4

FET Type :

N-Channel

Channel Mode :

Enhancement

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Manufacturer :

IXYS

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Power Dissipation :

300W

Transistor Type :

1 N-Channel

Mounting Type :

Surface Mount

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+ 150 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

80A

Configuration :

Single