IXFT13N100

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Mfr.Part #
IXFT13N100
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1000V 12.5A TO268
Stock
39,837
In Stock :
39,837

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
yes
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
900m Ω @ 500mA, 10V
Packaging :
Tube
Current Rating :
13A
Number of Terminations :
2
Pin Count :
4
Terminal Form :
Gull wing
FET Feature :
--
FET Type :
N-Channel
Mounting Type :
Surface Mount
Fall Time (Typ) :
32 ns
Drain Current-Max (Abs) (ID) :
12.5 A
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max :
300W Tc
Voltage - Rated DC :
1kV
Manufacturer :
IXYS Corporation
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Number of Elements :
1
Turn-Off Delay Time :
62 ns
Published :
2000
Lead Free :
Lead Free
Power Dissipation-Max (Abs) :
300 W
Min Operating Temperature :
-55°C
Product Status :
Obsolete
Continuous Drain Current (ID) :
12.5A
Package Shape :
RECTANGULAR
Package :
Tube
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Power Dissipation (Max) :
300W (Tc)
JEDEC-95 Code :
TO-268
Terminal Finish :
Matte Tin (Sn)
Reach Compliance Code :
not_compliant
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
HiPerFET™
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Power Dissipation :
300W
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
1000 V
Rise Time :
33ns
RoHS Status :
RoHS Compliant
Resistance :
900mOhm
Supplier Device Package :
TO-268
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
4000pF @ 25V
Drain to Source Breakdown Voltage :
1kV
Pbfree Code :
yes
JESD-609 Code :
e3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
Operating Temperature :
--
Base Product Number :
IXFT13
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
50A
Number of Terminals :
2
Current - Continuous Drain (Id) @ 25°C :
12.5A Tc
JESD-30 Code :
R-PSSO-G2
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Max Operating Temperature :
150°C
Drain to Source Voltage (Vdss) :
1000V
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
0.9 Ω
Datasheets
IXFT13N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT13N100 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:--, IXFT13N100 pinout, IXFT13N100 datasheet PDF, IXFT13N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT13N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT13N100


N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT13N100 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFT13N100 Features


a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)


IXFT13N100 Applications


There are a lot of IXYS
IXFT13N100 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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