IXFT13N100
- Mfr.Part #
- IXFT13N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 12.5A TO268
- Stock
- 39,837
- In Stock :
- 39,837
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 12.5 A
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Product Status :
- Obsolete
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 1kV
- Rise Time :
- 33ns
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- RoHS Compliant
- Series :
- HiPerFET™
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Tc
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 50A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 1kV
- Number of Elements :
- 1
- Max Operating Temperature :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Manufacturer :
- IXYS Corporation
- JEDEC-95 Code :
- TO-268
- Package :
- Tube
- Turn-Off Delay Time :
- 62 ns
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 32 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Resistance :
- 900mOhm
- Drain-source On Resistance-Max :
- 0.9 Ω
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 500mA, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2000
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Number of Terminals :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 300W (Tc)
- Power Dissipation-Max :
- 300W Tc
- Supplier Device Package :
- TO-268
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Drain to Source Voltage (Vdss) :
- 1000V
- Current Rating :
- 13A
- Base Product Number :
- IXFT13
- Power Dissipation-Max (Abs) :
- 300 W
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Power Dissipation :
- 300W
- Operating Temperature :
- --
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 12.5A
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 1000 V
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Polarity/Channel Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Element Configuration :
- Single
- Datasheets
- IXFT13N100

N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT13N100 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFT13N100 Features
a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)
IXFT13N100 Applications
There are a lot of IXYS
IXFT13N100 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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