IXFT13N100
- Mfr.Part #
- IXFT13N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 12.5A TO268
- Stock
- 39,837
- In Stock :
- 39,837
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 500mA, 10V
- Packaging :
- Tube
- Current Rating :
- 13A
- Number of Terminations :
- 2
- Pin Count :
- 4
- Terminal Form :
- Gull wing
- FET Feature :
- --
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 32 ns
- Drain Current-Max (Abs) (ID) :
- 12.5 A
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 300W Tc
- Voltage - Rated DC :
- 1kV
- Manufacturer :
- IXYS Corporation
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 62 ns
- Published :
- 2000
- Lead Free :
- Lead Free
- Power Dissipation-Max (Abs) :
- 300 W
- Min Operating Temperature :
- -55°C
- Product Status :
- Obsolete
- Continuous Drain Current (ID) :
- 12.5A
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Power Dissipation (Max) :
- 300W (Tc)
- JEDEC-95 Code :
- TO-268
- Terminal Finish :
- Matte Tin (Sn)
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- HiPerFET™
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Power Dissipation :
- 300W
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 1000 V
- Rise Time :
- 33ns
- RoHS Status :
- RoHS Compliant
- Resistance :
- 900mOhm
- Supplier Device Package :
- TO-268
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Drain to Source Breakdown Voltage :
- 1kV
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Operating Temperature :
- --
- Base Product Number :
- IXFT13
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 50A
- Number of Terminals :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Tc
- JESD-30 Code :
- R-PSSO-G2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 1000V
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.9 Ω
- Datasheets
- IXFT13N100

N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT13N100 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFT13N100 Features
a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)
IXFT13N100 Applications
There are a lot of IXYS
IXFT13N100 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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