IXFT13N100
- Mfr.Part #
- IXFT13N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 12.5A TO268
- Stock
- 39,837
- In Stock :
- 39,837
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Operating Temperature :
- --
- Drain-source On Resistance-Max :
- 0.9 Ω
- Manufacturer :
- IXYS Corporation
- Power Dissipation (Max) :
- 300W (Tc)
- Resistance :
- 900mOhm
- Min Operating Temperature :
- -55°C
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Tc
- DS Breakdown Voltage-Min :
- 1000 V
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Lead Free :
- Lead Free
- Max Operating Temperature :
- 150°C
- Base Product Number :
- IXFT13
- Pin Count :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 62 ns
- JEDEC-95 Code :
- TO-268
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Current Rating :
- 13A
- FET Feature :
- --
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Drain to Source Voltage (Vdss) :
- 1000V
- Rise Time :
- 33ns
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Package :
- Tube
- Supplier Device Package :
- TO-268
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Drain to Source Breakdown Voltage :
- 1kV
- Power Dissipation :
- 300W
- Fall Time (Typ) :
- 32 ns
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 1kV
- Continuous Drain Current (ID) :
- 12.5A
- Power Dissipation-Max :
- 300W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 500mA, 10V
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 50A
- Published :
- 2000
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Product Status :
- Obsolete
- RoHS Status :
- RoHS Compliant
- Series :
- HiPerFET™
- Terminal Form :
- Gull wing
- Power Dissipation-Max (Abs) :
- 300 W
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 12.5 A
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXFT13N100

N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT13N100 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFT13N100 Features
a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)
IXFT13N100 Applications
There are a lot of IXYS
IXFT13N100 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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