IXFT13N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

50A

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Package Shape :

RECTANGULAR

Drain Current-Max (Abs) (ID) :

12.5 A

Continuous Drain Current (ID) :

12.5A

Turn-Off Delay Time :

62 ns

Fall Time (Typ) :

32 ns

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

900m Ω @ 500mA, 10V

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

12.5A Tc

FET Feature :

--

Power Dissipation-Max :

300W Tc

Voltage - Rated DC :

1kV

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Qualification Status :

Not Qualified

Manufacturer :

IXYS Corporation

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

--

Series :

HiPerFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Pbfree Code :

yes

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Reach Compliance Code :

not_compliant

Terminal Position :

Single

Max Operating Temperature :

150°C

Published :

2000

Terminal Form :

Gull wing

Number of Terminals :

2

Terminal Finish :

Matte Tin (Sn)

Power Dissipation (Max) :

300W (Tc)

Drain-source On Resistance-Max :

0.9 Ω

Transistor Application :

SWITCHING

Mount :

Surface Mount

Resistance :

900mOhm

Current Rating :

13A

Package :

Tube

DS Breakdown Voltage-Min :

1000 V

Power Dissipation-Max (Abs) :

300 W

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

300W

Rise Time :

33ns

Product Status :

Obsolete

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Drain to Source Breakdown Voltage :

1kV

Number of Terminations :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Supplier Device Package :

TO-268

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXFT13

Drain to Source Voltage (Vdss) :

1000V

JEDEC-95 Code :

TO-268

Additional Feature :

AVALANCHE RATED