IXFT13N100

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Mfr.Part #
IXFT13N100
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1000V 12.5A TO268
Stock
39,837
In Stock :
39,837

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Operating Temperature :
--
Drain-source On Resistance-Max :
0.9 Ω
Manufacturer :
IXYS Corporation
Power Dissipation (Max) :
300W (Tc)
Resistance :
900mOhm
Min Operating Temperature :
-55°C
Package Shape :
RECTANGULAR
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
12.5A Tc
DS Breakdown Voltage-Min :
1000 V
FET Type :
N-Channel
Vgs (Max) :
±20V
Element Configuration :
Single
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Lead Free :
Lead Free
Max Operating Temperature :
150°C
Base Product Number :
IXFT13
Pin Count :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
62 ns
JEDEC-95 Code :
TO-268
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
yes
Current Rating :
13A
FET Feature :
--
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Drain to Source Voltage (Vdss) :
1000V
Rise Time :
33ns
JESD-609 Code :
e3
Reach Compliance Code :
not_compliant
Package :
Tube
Supplier Device Package :
TO-268
Terminal Finish :
Matte Tin (Sn)
Terminal Position :
Single
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
4000pF @ 25V
Drain to Source Breakdown Voltage :
1kV
Power Dissipation :
300W
Fall Time (Typ) :
32 ns
Mounting Type :
Surface Mount
Voltage - Rated DC :
1kV
Continuous Drain Current (ID) :
12.5A
Power Dissipation-Max :
300W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Number of Terminals :
2
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
900m Ω @ 500mA, 10V
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
50A
Published :
2000
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Product Status :
Obsolete
RoHS Status :
RoHS Compliant
Series :
HiPerFET™
Terminal Form :
Gull wing
Power Dissipation-Max (Abs) :
300 W
JESD-30 Code :
R-PSSO-G2
Mount :
Surface Mount
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
12.5 A
Number of Terminations :
2
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXFT13N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT13N100 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:--, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Number of Terminations:2, IXFT13N100 pinout, IXFT13N100 datasheet PDF, IXFT13N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT13N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT13N100


N-Channel Tube 900m Ω @ 500mA, 10V ±20V 4000pF @ 25V 155nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT13N100 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1kV. And this device has 1kV drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000 V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFT13N100 Features


a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 50A.
a 1000V drain to source voltage (Vdss)


IXFT13N100 Applications


There are a lot of IXYS
IXFT13N100 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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