IXFT12N90Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

900 V

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Maximum Operating Temperature :

+ 150 C

Drain to Source Breakdown Voltage :

900V

Transistor Application :

SWITCHING

Number of Elements :

1

Package Shape :

RECTANGULAR

Pbfree Code :

yes

Configuration :

Single

Pulsed Drain Current-Max (IDM) :

48A

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Reach Compliance Code :

not_compliant

Terminal Position :

Single

Number of Terminals :

2

Drain-source On Resistance-Max :

0.9Ohm

Length :

16.13 mm

Transistor Type :

1 N-Channel

Surface Mount :

yes

Product Type :

MOSFET

JESD-609 Code :

e3

Supplier Device Package :

TO-268

Transistor Polarity :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

2

Number of Pins :

3

Power Dissipation-Max (Abs) :

300 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

300W

Height :

21.34 mm

Package :

Tube

Tradename :

HiPerFET

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

300W Tc

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Channel Mode :

Enhancement

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2000

Continuous Drain Current (ID) :

12A

Manufacturer :

IXYS

Mounting Style :

SMD/SMT

JESD-30 Code :

R-PSSO-G2

Brand :

IXYS

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HiPerFET™

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1 Channel

Product Category :

MOSFET

Drain Current-Max (Abs) (ID) :

12 A

JEDEC-95 Code :

TO-268AA

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Base Product Number :

IXFT12

Mounting Type :

Surface Mount

Turn-Off Delay Time :

40 ns

Packaging :

Tube

Power Dissipation (Max) :

300W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Terminal Form :

Gull wing

Fall Time (Typ) :

15 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

23ns

Element Configuration :

Single

Width :

5.21 mm

Drain to Source Voltage (Vdss) :

900V

Rds On (Max) @ Id, Vgs :

900m Ω @ 6A, 10V

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-Channel

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Pin Count :

4

Transistor Element Material :

SILICON