IXFT12N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HiPerFET™

Product Type :

MOSFET

Published :

2004

Drain to Source Voltage (Vdss) :

1000V

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Number of Terminations :

2

Packaging :

Tube

Channel Mode :

Enhancement

Power Dissipation-Max (Abs) :

300 W

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Drain to Source Breakdown Voltage :

1kV

Supplier Device Package :

TO-268

Rise Time :

33ns

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Manufacturer :

IXYS

Tradename :

HyperFET

Transistor Application :

SWITCHING

Height :

5.1 mm

Turn-Off Delay Time :

62 ns

Fall Time (Typ) :

32 ns

Surface Mount :

yes

Number of Terminals :

2

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Power Dissipation-Max :

300W Tc

Mounting Style :

SMD/SMT

Polarity/Channel Type :

N-Channel

Configuration :

Single

FET Feature :

--

Number of Elements :

1

Product Status :

Active

Number of Channels :

1 Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

JEDEC-95 Code :

TO-268AA

Length :

16.05 mm

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 6A, 10V

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

300W (Tc)

Pin Count :

4

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Base Product Number :

IXFT12

DS Breakdown Voltage-Min :

1000 V

Drain Current-Max (Abs) (ID) :

12 A

Transistor Type :

1 N-Channel

Gate to Source Voltage (Vgs) :

20V

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Product Category :

MOSFET

Pulsed Drain Current-Max (IDM) :

48A

Vgs (Max) :

±20V

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Width :

14 mm

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

12A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

300W

Drain-source On Resistance-Max :

1.05 Ω

JESD-609 Code :

e3

Element Configuration :

Single

Brand :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Package :

Tube