IXFT140N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

16.05 mm

Subcategory :

MOSFETs

Continuous Drain Current (ID) :

140A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Product Type :

MOSFET

Maximum Operating Temperature :

+ 175 C

Package :

Box

Published :

2006

DS Breakdown Voltage-Min :

100 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 4mA

Power Dissipation-Max :

600W Tc

Threshold Voltage :

5V

Number of Terminations :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Reach Compliance Code :

Unknown

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

300 A

JEDEC-95 Code :

TO-268AA

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Factory Lead Time :

26 Weeks

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.011Ohm

Element Configuration :

Single

Number of Pins :

3

Mount :

Surface Mount

Number of Terminals :

2

Current - Continuous Drain (Id) @ 25°C :

140A Tc

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

11m Ω @ 70A, 10V

Transistor Polarity :

N-Channel

Fall Time (Typ) :

26 ns

Polarity/Channel Type :

N-Channel

Number of Channels :

1 Channel

Pin Count :

4

Base Product Number :

IXFT140

JESD-609 Code :

e3

RoHS :

Details

Tradename :

HiPerFET

Vgs (Max) :

±20V

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

100V

Power Dissipation (Max) :

600W (Tc)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

2500 mJ

Transistor Type :

1 N-Channel

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

FET Feature :

--

Terminal Position :

Single

Width :

14 mm

Turn-Off Delay Time :

85 ns

Power Dissipation :

600W

Channel Mode :

Enhancement

Mounting Style :

SMD/SMT

Supplier Device Package :

TO-268

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

Package Shape :

RECTANGULAR

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

yes

Configuration :

Single

Drain to Source Breakdown Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Rise Time :

50ns

Qualification Status :

Not Qualified

Brand :

IXYS

Series :

HiPerFET™, PolarHT™

Manufacturer :

IXYS

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Height :

5.1 mm

Type :

PolarHV HiPerFET Power MOSFET

Number of Elements :

1