IXFT12N100F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Series :

HiPerRF™

Pin Count :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

12A

Pulsed Drain Current-Max (IDM) :

48A

Avalanche Energy Rating (Eas) :

1000 mJ

Supplier Device Package :

TO-268 (IXFT)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Rise Time :

9.8ns

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

300W Tc

Max Operating Temperature :

150 °C

Case Connection :

DRAIN

Product Status :

Obsolete

Number of Pins :

3

Drain to Source Resistance :

1.05 Ω

Factory Lead Time :

10 Weeks

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Power Dissipation :

300W

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Max Power Dissipation :

300 W

JESD-609 Code :

e3

Drain-source On Resistance-Max :

1.05 Ω

Turn-Off Delay Time :

31 ns

Current - Continuous Drain (Id) @ 25°C :

12A Tc

DS Breakdown Voltage-Min :

1000 V

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Min Operating Temperature :

-55 °C

Termination :

SMD/SMT

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

1000V

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Manufacturer :

IXYS Corporation

Base Product Number :

IXFT12

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Number of Elements :

1

FET Feature :

--

JEDEC-95 Code :

TO-268AA

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

1kV

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

1kV

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

RoHS :

Compliant

Power Dissipation (Max) :

300W (Tc)

Qualification Status :

Not Qualified

Nominal Vgs :

5.5 V

Element Configuration :

Single

Fall Time (Typ) :

12 ns

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 6A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Published :

2009

Terminal Form :

Gull wing

Number of Terminals :

2

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA