IXFT12N100F
- Mfr.Part #
- IXFT12N100F
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 12A TO268
- Stock
- 6,229
- In Stock :
- 6,229
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Rds On (Max) @ Id, Vgs :
- 1.05 Ω @ 6A, 10V
- Nominal Vgs :
- 5.5 V
- Factory Lead Time :
- 10 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Series :
- HiPerRF™
- Power Dissipation (Max) :
- 300W (Tc)
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Continuous Drain Current (ID) :
- 12A
- Min Operating Temperature :
- -55 °C
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Fall Time (Typ) :
- 12 ns
- Published :
- 2009
- DS Breakdown Voltage-Min :
- 1000 V
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- JESD-609 Code :
- e3
- Number of Terminals :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 31 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Operating Temperature :
- 150 °C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-268AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700pF @ 25V
- Drain to Source Voltage (Vdss) :
- 1000V
- Polarity/Channel Type :
- N-Channel
- Product Status :
- Obsolete
- Rise Time :
- 9.8ns
- Case Connection :
- DRAIN
- Max Power Dissipation :
- 300 W
- Mounting Type :
- Surface Mount
- FET Feature :
- --
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Gull wing
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Pin Count :
- 4
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 1kV
- Gate Charge (Qg) (Max) @ Vgs :
- 77nC @ 10V
- RoHS :
- Compliant
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 48A
- Base Product Number :
- IXFT12
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Drain-source On Resistance-Max :
- 1.05 Ω
- Power Dissipation-Max :
- 300W Tc
- Supplier Device Package :
- TO-268 (IXFT)
- Termination :
- SMD/SMT
- Number of Terminations :
- 2
- Dual Supply Voltage :
- 1kV
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Drain to Source Resistance :
- 1.05 Ω
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSSO-G2
- Manufacturer :
- IXYS Corporation
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 300W
- Number of Elements :
- 1
- Datasheets
- IXFT12N100F

N-Channel Tube 1.05 Ω @ 6A, 10V ±20V 2700pF @ 25V 77nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT12N100F Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 2700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 31 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 48A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.05 Ω.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFT12N100F Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 48A.
single MOSFETs transistor is 1.05 Ω
a 1000V drain to source voltage (Vdss)
IXFT12N100F Applications
There are a lot of IXYS
IXFT12N100F applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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