IXFT12N100F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXFT12

ECCN Code :

EAR99

Continuous Drain Current (ID) :

12A

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Fall Time (Typ) :

12 ns

Rise Time :

9.8ns

Pbfree Code :

yes

Factory Lead Time :

10 Weeks

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Dual Supply Voltage :

1kV

Drain to Source Voltage (Vdss) :

1000V

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Min Operating Temperature :

-55 °C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Pin Count :

4

Termination :

SMD/SMT

Number of Elements :

1

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Published :

2009

RoHS :

Compliant

Additional Feature :

AVALANCHE RATED

FET Feature :

--

Terminal Finish :

Matte Tin (Sn)

Package :

Tube

Power Dissipation-Max :

300W Tc

Number of Terminals :

2

Drain to Source Breakdown Voltage :

1kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150 °C

Pulsed Drain Current-Max (IDM) :

48A

Vgs (Max) :

±20V

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Drain-source On Resistance-Max :

1.05 Ω

Manufacturer :

IXYS Corporation

Number of Terminations :

2

JEDEC-95 Code :

TO-268AA

Max Power Dissipation :

300 W

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 6A, 10V

DS Breakdown Voltage-Min :

1000 V

Product Status :

Obsolete

Avalanche Energy Rating (Eas) :

1000 mJ

Qualification Status :

Not Qualified

Power Dissipation :

300W

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Power Dissipation (Max) :

300W (Tc)

Supplier Device Package :

TO-268 (IXFT)

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Terminal Form :

Gull wing

Nominal Vgs :

5.5 V

Drain to Source Resistance :

1.05 Ω

Surface Mount :

yes

Series :

HiPerRF™

Turn-Off Delay Time :

31 ns

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED