IXFT14N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

SMD/SMT

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Power Dissipation-Max :

400W Tc

Tradename :

HiPerFET

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Package :

Tube

Rds On (Max) @ Id, Vgs :

720m Ω @ 500mA, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

800V

Power Dissipation (Max) :

400W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Subcategory :

MOSFETs

Pin Count :

4

Continuous Drain Current (ID) :

14A

JEDEC-95 Code :

TO-268AA

Supplier Device Package :

TO-268

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Series :

HiPerFET™, PolarHT™

Number of Terminals :

2

Surface Mount :

yes

Manufacturer :

IXYS

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Factory Lead Time :

24 Weeks

Mount :

Surface Mount

Transistor Polarity :

N-Channel

Power Dissipation :

400W

Brand :

IXYS

Terminal Form :

Gull wing

Product Type :

MOSFET

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Base Product Number :

IXFT14

Number of Elements :

1

Avalanche Energy Rating (Eas) :

500 mJ

Product Status :

Active

Packaging :

Tube

Product Category :

MOSFET

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.72Ohm

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

FET Feature :

--

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

800V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 25V

Polarity/Channel Type :

N-Channel