IXFT14N80P
- Mfr.Part #
- IXFT14N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 14A TO268
- Stock
- 45,997
- In Stock :
- 45,997
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HiPerFET™, PolarHT™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Factory Lead Time :
- 24 Weeks
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Power Dissipation :
- 400W
- Package :
- Tube
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Qualification Status :
- Not Qualified
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- SMD/SMT
- Vgs (Max) :
- ±30V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminals :
- 2
- Transistor Polarity :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Terminal Finish :
- Matte Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Product Type :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 800V
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 25V
- Drain to Source Voltage (Vdss) :
- 800V
- Product Category :
- MOSFET
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Package Shape :
- RECTANGULAR
- Surface Mount :
- yes
- Tradename :
- HiPerFET
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- not_compliant
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 400W Tc
- Rds On (Max) @ Id, Vgs :
- 720m Ω @ 500mA, 10V
- Published :
- 2006
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 0.72Ohm
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 500 mJ
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation (Max) :
- 400W (Tc)
- Subcategory :
- MOSFETs
- Continuous Drain Current (ID) :
- 14A
- Supplier Device Package :
- TO-268
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-268AA
- Brand :
- IXYS
- Base Product Number :
- IXFT14
- Datasheets
- IXFT14N80P

N-Channel Tube 720m Ω @ 500mA, 10V ±30V 3900pF @ 25V 61nC @ 10V 800V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT14N80P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFT14N80P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 14A
a 800V drain to source voltage (Vdss)
IXFT14N80P Applications
There are a lot of IXYS
IXFT14N80P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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