IXFT6N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

5.1 mm

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Tradename :

HiPerFET

Transistor Type :

1 N-Channel

JESD-30 Code :

R-PSSO-G2

Number of Terminals :

2

Package :

Tube

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Maximum Operating Temperature :

+ 150 C

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Rise Time :

15ns

Continuous Drain Current (ID) :

6A

Turn-Off Delay Time :

22 ns

Mount :

Surface Mount

Surface Mount :

yes

Length :

16.05 mm

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-268

Transistor Application :

SWITCHING

Brand :

IXYS

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Drain to Source Resistance :

1.9 Ω

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Power Dissipation (Max) :

180W (Tc)

Number of Elements :

1

Factory Lead Time :

8 Weeks

Product Type :

MOSFET

Number of Channels :

1 Channel

Drain Current-Max (Abs) (ID) :

6A

DS Breakdown Voltage-Min :

1000 V

Product Status :

Obsolete

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

180W Tc

Transistor Polarity :

N-Channel

Input Capacitance :

2.2 nF

Transistor Element Material :

SILICON

Max Power Dissipation :

180 W

RoHS :

Compliant

Min Operating Temperature :

-55 °C

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

14 mm

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Base Product Number :

IXFT6

Power Dissipation-Max (Abs) :

180 W

Fall Time (Typ) :

12 ns

Pin Count :

4

Rds On Max :

1.9 Ω

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HiPerFET™

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Vgs(th) (Max) @ Id :

4.5V @ 2.5mA

Avalanche Energy Rating (Eas) :

700 mJ

Element Configuration :

Single

Mounting Style :

SMD/SMT

FET Type :

N-Channel

Vgs (Max) :

±20V

Manufacturer :

IXYS

Drain to Source Voltage (Vdss) :

1000V

Published :

2003

Pulsed Drain Current-Max (IDM) :

24A

Power Dissipation :

180W

Gate to Source Voltage (Vgs) :

20V

FET Feature :

--

Radiation Hardening :

No

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

1kV

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3A, 10V

Max Operating Temperature :

150 °C

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Pbfree Code :

yes

Product Category :

MOSFET

Configuration :

Single

Drain-source On Resistance-Max :

2Ohm

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

JEDEC-95 Code :

TO-268

Terminal Form :

Gull wing