IXFT6N100F

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Product Type :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

24A

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

6A

Number of Terminals :

2

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

1kV

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

SMD/SMT

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

1000V

Number of Channels :

1 Channel

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

5.1 mm

FET Type :

N-Channel

Pbfree Code :

yes

Turn-Off Delay Time :

31 ns

Product Category :

MOSFET

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±20V

Product Status :

Obsolete

Continuous Drain Current (ID) :

6A

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Power Dissipation (Max) :

180W (Tc)

Maximum Operating Temperature :

+ 150 C

Length :

16.05 mm

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Terminal Position :

Single

Mount :

Surface Mount

Package Shape :

RECTANGULAR

Series :

HiPerRF™

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Fall Time (Typ) :

8.3 ns

JEDEC-95 Code :

TO-268AA

Subcategory :

MOSFETs

Manufacturer :

IXYS

Width :

14 mm

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Base Product Number :

IXFT6

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Published :

2009

Drain-source On Resistance-Max :

1.9 Ω

Transistor Type :

1 N-Channel

Factory Lead Time :

10 Weeks

Avalanche Energy Rating (Eas) :

700 mJ

RoHS :

Details

Pin Count :

4

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

180W

Reach Compliance Code :

Unknown

Configuration :

Single

Power Dissipation-Max :

180W Tc

DS Breakdown Voltage-Min :

1000 V

JESD-30 Code :

R-PSSO-G2

Brand :

IXYS

Terminal Finish :

Matte Tin (Sn)

Transistor Polarity :

N-Channel

Rise Time :

8.6ns

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-268 (IXFT)