IXFT6N100F

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Mfr.Part #
IXFT6N100F
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1000V 6A TO268
Stock
36,722
In Stock :
36,722

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
180W
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Minimum Operating Temperature :
- 55 C
Drain to Source Breakdown Voltage :
1kV
Width :
14 mm
Supplier Device Package :
TO-268 (IXFT)
Maximum Operating Temperature :
+ 150 C
Input Capacitance (Ciss) (Max) @ Vds :
1770pF @ 25V
Terminal Form :
Gull wing
FET Type :
N-Channel
Transistor Type :
1 N-Channel
DS Breakdown Voltage-Min :
1000 V
Subcategory :
MOSFETs
JEDEC-95 Code :
TO-268AA
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Configuration :
Single
Rds On (Max) @ Id, Vgs :
1.9 Ω @ 3A, 10V
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
31 ns
Product Category :
MOSFET
Channel Mode :
Enhancement
Power Dissipation (Max) :
180W (Tc)
Base Product Number :
IXFT6
Transistor Polarity :
N-Channel
Number of Terminals :
2
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
6A
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
Number of Elements :
1
Packaging :
Tube
Package :
Tube
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminations :
2
Number of Channels :
1 Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Status :
Obsolete
Series :
HiPerRF™
Factory Lead Time :
10 Weeks
FET Feature :
--
Length :
16.05 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
8.3 ns
Manufacturer :
IXYS
Gate to Source Voltage (Vgs) :
20V
Pin Count :
4
RoHS Status :
ROHS3 Compliant
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Reach Compliance Code :
Unknown
Pulsed Drain Current-Max (IDM) :
24A
JESD-30 Code :
R-PSSO-G2
Terminal Finish :
Matte Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Polarity/Channel Type :
N-Channel
JESD-609 Code :
e3
Mount :
Surface Mount
Drain Current-Max (Abs) (ID) :
6A
Case Connection :
DRAIN
Package Shape :
RECTANGULAR
Rise Time :
8.6ns
Power Dissipation-Max :
180W Tc
Surface Mount :
yes
Published :
2009
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Product Type :
MOSFET
Height :
5.1 mm
Terminal Position :
Single
Number of Pins :
3
Qualification Status :
Not Qualified
Brand :
IXYS
Avalanche Energy Rating (Eas) :
700 mJ
Drain-source On Resistance-Max :
1.9 Ω
Mounting Style :
SMD/SMT
Datasheets
IXFT6N100F
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT6N100F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Pins:3, IXFT6N100F pinout, IXFT6N100F datasheet PDF, IXFT6N100F amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT6N100F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT6N100F


N-Channel Tube 1.9 Ω @ 3A, 10V ±20V 1770pF @ 25V 54nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT6N100F Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 700 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1770pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.Peak drain current is 24A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFT6N100F Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 24A.
a 1000V drain to source voltage (Vdss)


IXFT6N100F Applications


There are a lot of IXYS
IXFT6N100F applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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