IXFT69N30P
- Mfr.Part #
- IXFT69N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 69A TO268
- Stock
- 2,976
- In Stock :
- 2,976
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 69 A
- FET Feature :
- --
- FET Type :
- N-Channel
- Number of Terminals :
- 2
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Vgs (Max) :
- ±20V
- Power Dissipation-Max (Abs) :
- 500 W
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Channel Mode :
- Enhancement
- Brand :
- IXYS
- Drain to Source Breakdown Voltage :
- 300V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Series :
- PolarHT™ HiPerFET™
- Max Power Dissipation :
- 500 W
- JEDEC-95 Code :
- TO-268AA
- Continuous Drain Current (ID) :
- 69A
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 27 ns
- Power Dissipation :
- 500W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-268
- Transistor Type :
- 1 N-Channel
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Surface Mount :
- yes
- Number of Channels :
- 1 Channel
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 200A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Base Product Number :
- IXFT69
- Rise Time :
- 25ns
- Tradename :
- HiPerFET
- Current - Continuous Drain (Id) @ 25°C :
- 69A Tc
- Maximum Operating Temperature :
- + 150 C
- Product Status :
- Active
- Drain-source On Resistance-Max :
- 0.049Ohm
- Min Operating Temperature :
- -55 °C
- Mounting Style :
- SMD/SMT
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance :
- 4.96 nF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 500mA, 10V
- Turn-Off Delay Time :
- 75 ns
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Terminal Position :
- Single
- Package :
- Box
- Reach Compliance Code :
- not_compliant
- Product Category :
- MOSFET
- Power Dissipation (Max) :
- 500W (Tc)
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Drain to Source Resistance :
- 49 mΩ
- ECCN Code :
- EAR99
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 500W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Product Type :
- MOSFET
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 300 V
- Rds On Max :
- 49 mΩ
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 300V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4960pF @ 25V
- Factory Lead Time :
- 26 Weeks
- Number of Elements :
- 1
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Max Operating Temperature :
- 150 °C
- Manufacturer :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Datasheets
- IXFT69N30P

N-Channel Tube 49m Ω @ 500mA, 10V ±20V 4960pF @ 25V 180nC @ 10V 300V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT69N30P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4960pF @ 25V.This device conducts a continuous drain current (ID) of 69A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 69 A.When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 200A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 49 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFT69N30P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 69A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 200A.
single MOSFETs transistor is 49 mΩ
a 300V drain to source voltage (Vdss)
IXFT69N30P Applications
There are a lot of IXYS
IXFT69N30P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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