IXFT52N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HiPerFET™, PolarHV™

Power Dissipation (Max) :

960W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

TO-268

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Minimum Operating Temperature :

- 55 C

RoHS :

Compliant

Max Operating Temperature :

150 °C

Reach Compliance Code :

not_compliant

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Transistor Polarity :

N-Channel

Brand :

IXYS

Power Dissipation-Max (Abs) :

960 W

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Pin Count :

4

Mounting Style :

SMD/SMT

FET Feature :

--

Rds On (Max) @ Id, Vgs :

120m Ω @ 26A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

150A

Published :

2011

Pbfree Code :

yes

Package :

Tube

Transistor Element Material :

SILICON

Tradename :

HiPerFET

Operating Temperature :

-55°C~150°C TJ

Input Capacitance :

6.8 nF

Factory Lead Time :

26 Weeks

Gate to Source Voltage (Vgs) :

30V

Maximum Operating Temperature :

+ 150 C

Product Type :

MOSFET

FET Type :

N-Channel

Power Dissipation :

960W

Terminal Position :

Single

Product Status :

Active

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED

Rds On Max :

120 mΩ

Packaging :

Tube

JESD-609 Code :

e3

Base Product Number :

IXFT52

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

113nC @ 10V

Drain-source On Resistance-Max :

0.12Ohm

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Resistance :

120 mΩ

Number of Terminations :

2

JEDEC-95 Code :

TO-268AA

Continuous Drain Current (ID) :

52A

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

1500 mJ

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

500V

Power Dissipation-Max :

960W Tc

Max Power Dissipation :

960 W

Drain Current-Max (Abs) (ID) :

52 A

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

500 V

Product Category :

MOSFET

Min Operating Temperature :

-55 °C

Number of Terminals :

2

Type :

PolarP2 HiperFET Power MOSFET

Drain to Source Voltage (Vdss) :

500V

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

Vgs (Max) :

±30V

Configuration :

Single

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA