IXFT50N60P3

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Mfr.Part #
IXFT50N60P3
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 600V 50A TO268
Stock
188
In Stock :
188

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Length :
16.05mm
Operating Temperature :
-55°C~150°C TJ
Height :
5.1mm
Turn-Off Delay Time :
62 ns
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
125A
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Product Number :
IXFT50
Maximum Operating Temperature :
+ 150 C
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-G2
RoHS :
Details
Element Configuration :
Single
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Rds On (Max) @ Id, Vgs :
145m Ω @ 500mA, 10V
Configuration :
Single
Number of Channels :
1 Channel
Package :
Tube
Mounting Style :
SMD/SMT
Series :
HiPerFET™, Polar3™
Product Type :
MOSFET
Channel Mode :
Enhancement
Drain to Source Voltage (Vdss) :
600V
Drain-source On Resistance-Max :
0.145Ohm
Vgs(th) (Max) @ Id :
5V @ 4mA
Factory Lead Time :
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Transistor Type :
1 N-Channel
Avalanche Energy Rating (Eas) :
1000 mJ
Number of Pins :
3
Drain to Source Breakdown Voltage :
600V
Brand :
IXYS
Rise Time :
20ns
Power Dissipation-Max :
1040W Tc
Turn On Delay Time :
31 ns
Manufacturer :
IXYS
Number of Terminations :
2
Tradename :
HiPerFET
Mounting Type :
Surface Mount
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Fall Time (Typ) :
17 ns
Gate to Source Voltage (Vgs) :
30V
Mount :
Surface Mount
Power Dissipation (Max) :
1040W (Tc)
Additional Feature :
AVALANCHE RATED
Terminal Finish :
Matte Tin (Sn)
Transistor Polarity :
N-Channel
Power Dissipation :
1.04kW
Supplier Device Package :
TO-268
Width :
14mm
FET Type :
N-Channel
FET Feature :
--
Number of Elements :
1
Reach Compliance Code :
Unknown
Product Category :
MOSFET
Published :
2012
Minimum Operating Temperature :
- 55 C
Pin Count :
4
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±30V
Continuous Drain Current (ID) :
50A
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
94nC @ 10V
JESD-609 Code :
e3
Datasheets
IXFT50N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT50N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXFT50N60P3 pinout, IXFT50N60P3 datasheet PDF, IXFT50N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT50N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT50N60P3


N-Channel Tube 145m Ω @ 500mA, 10V ±30V 6300pF @ 25V 94nC @ 10V 600V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT50N60P3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 50A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 125A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 31 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFT50N60P3 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 125A.
a 600V drain to source voltage (Vdss)


IXFT50N60P3 Applications


There are a lot of IXYS
IXFT50N60P3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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