IXFT50N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Package :

Tube

Base Product Number :

IXFT50

Drain-source On Resistance-Max :

0.045 Ω

Transistor Element Material :

SILICON

Power Dissipation (Max) :

300W (Tc)

Surface Mount :

yes

Min Operating Temperature :

-55 °C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Manufacturer :

Littelfuse Inc

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Rise Time :

15ns

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Supplier Device Package :

TO-268

Number of Terminals :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Series :

HiPerFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Max Power Dissipation :

300 W

Mount :

Surface Mount

Resistance :

45mOhm

Vgs(th) (Max) @ Id :

4V @ 4mA

DS Breakdown Voltage-Min :

200 V

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

50A

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

200V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

200V

Power Dissipation-Max :

300W Tc

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Factory Lead Time :

26 Weeks

Max Operating Temperature :

150 °C

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-268AA

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Compliant

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Product Status :

Active

Turn-Off Delay Time :

72 ns

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Pulsed Drain Current-Max (IDM) :

200A

Pin Count :

2

FET Feature :

--

Gate to Source Voltage (Vgs) :

20V

Package Shape :

RECTANGULAR

Rds On Max :

45 mΩ

Vgs (Max) :

±20V

Power Dissipation :

300W

Fall Time (Typ) :

16 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

50 A

Drain to Source Resistance :

45 mΩ

Input Capacitance :

4.4 nF

Pbfree Code :

yes

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

300 W