IXFT44N50P

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Mfr.Part #
IXFT44N50P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO268
Stock
23,159
In Stock :
23,159

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
2
Terminal Position :
Single
Terminal Form :
Gull wing
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
44A
Reach Compliance Code :
not_compliant
Qualification Status :
Not Qualified
Transistor Polarity :
N-Channel
Brand :
IXYS
Length :
16.05 mm
Drain to Source Voltage (Vdss) :
500V
Element Configuration :
Single
Turn-Off Delay Time :
85 ns
Tradename :
HiPerFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Number of Terminations :
2
JEDEC-95 Code :
TO-268AA
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSSO-G2
Surface Mount :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Subcategory :
MOSFETs
Configuration :
Single
Product Type :
MOSFET
Maximum Operating Temperature :
+ 150 C
Base Product Number :
IXFT44
Number of Elements :
1
Mounting Type :
Surface Mount
Drain-source On Resistance-Max :
0.14Ohm
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Gate to Source Voltage (Vgs) :
30V
FET Feature :
--
JESD-609 Code :
e3
Power Dissipation-Max :
658W Tc
Supplier Device Package :
TO-268
Additional Feature :
AVALANCHE RATED
Packaging :
Tube
Height :
5.1 mm
Width :
14 mm
Current Rating :
44A
Avalanche Energy Rating (Eas) :
1700 mJ
RoHS :
Details
FET Type :
N-Channel
Product Status :
Active
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Surface Mount
Rise Time :
29ns
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
5440pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current :
44A
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Pin Count :
4
Series :
HiPerFET™, PolarHT™
Mounting Style :
SMD/SMT
Drain to Source Breakdown Voltage :
500V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
658W (Tc)
Rds On (Max) @ Id, Vgs :
140m Ω @ 22A, 10V
Manufacturer :
IXYS
Factory Lead Time :
26 Weeks
Terminal Finish :
Matte Tin (Sn)
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Package :
Tube
Voltage - Rated DC :
500V
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
1 N-Channel
Pulsed Drain Current-Max (IDM) :
110 A
Voltage :
500V
DS Breakdown Voltage-Min :
500 V
Channel Mode :
Enhancement
Product Category :
MOSFET
Number of Channels :
1 Channel
Published :
2006
Fall Time (Typ) :
27 ns
Pbfree Code :
yes
Number of Pins :
3
Transistor Element Material :
SILICON
Minimum Operating Temperature :
- 55 C
Vgs(th) (Max) @ Id :
5V @ 4mA
Power Dissipation :
650W
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
Datasheets
IXFT44N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT44N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:-55°C~150°C TJ, Voltage:500V, Number of Channels:1 Channel, Number of Pins:3, IXFT44N50P pinout, IXFT44N50P datasheet PDF, IXFT44N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT44N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT44N50P


N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT44N50P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1700 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5440pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 85 ns.Peak drain current is 110 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFT44N50P Features


the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110 A.
a 500V drain to source voltage (Vdss)


IXFT44N50P Applications


There are a lot of IXYS
IXFT44N50P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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