IXFT44N50P
- Mfr.Part #
- IXFT44N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO268
- Stock
- 23,159
- In Stock :
- 23,159
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 2
- Terminal Position :
- Single
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- N-Channel
- Continuous Drain Current (ID) :
- 44A
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- N-Channel
- Brand :
- IXYS
- Length :
- 16.05 mm
- Drain to Source Voltage (Vdss) :
- 500V
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 85 ns
- Tradename :
- HiPerFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- JEDEC-95 Code :
- TO-268AA
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Subcategory :
- MOSFETs
- Configuration :
- Single
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Base Product Number :
- IXFT44
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.14Ohm
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Gate to Source Voltage (Vgs) :
- 30V
- FET Feature :
- --
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 658W Tc
- Supplier Device Package :
- TO-268
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tube
- Height :
- 5.1 mm
- Width :
- 14 mm
- Current Rating :
- 44A
- Avalanche Energy Rating (Eas) :
- 1700 mJ
- RoHS :
- Details
- FET Type :
- N-Channel
- Product Status :
- Active
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Surface Mount
- Rise Time :
- 29ns
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5440pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current :
- 44A
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Pin Count :
- 4
- Series :
- HiPerFET™, PolarHT™
- Mounting Style :
- SMD/SMT
- Drain to Source Breakdown Voltage :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 658W (Tc)
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 22A, 10V
- Manufacturer :
- IXYS
- Factory Lead Time :
- 26 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Package :
- Tube
- Voltage - Rated DC :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- 1 N-Channel
- Pulsed Drain Current-Max (IDM) :
- 110 A
- Voltage :
- 500V
- DS Breakdown Voltage-Min :
- 500 V
- Channel Mode :
- Enhancement
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- Published :
- 2006
- Fall Time (Typ) :
- 27 ns
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Minimum Operating Temperature :
- - 55 C
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Power Dissipation :
- 650W
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Datasheets
- IXFT44N50P

N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT44N50P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1700 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5440pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 85 ns.Peak drain current is 110 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFT44N50P Features
the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110 A.
a 500V drain to source voltage (Vdss)
IXFT44N50P Applications
There are a lot of IXYS
IXFT44N50P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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