IXFT40N30Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Manufacturer :

IXYS Corporation

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

300V

Continuous Drain Current (ID) :

40A

Number of Terminals :

2

FET Feature :

--

Number of Elements :

1

Current Rating :

40A

Published :

2011

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

300V

Rds On (Max) @ Id, Vgs :

80m Ω @ 500mA, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

300W Tc

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

40 A

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED

Series :

HiPerFET™

Supplier Device Package :

TO-268

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Rise Time :

35ns

Pbfree Code :

yes

Element Configuration :

Single

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

DS Breakdown Voltage-Min :

300 V

Mount :

Surface Mount

Power Dissipation :

300W

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Voltage - Rated DC :

300V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 4mA

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

160 A

Packaging :

Tube

Surface Mount :

yes

Base Product Number :

IXFT40

Product Status :

Obsolete

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.085 Ω

Power Dissipation (Max) :

300W (Tc)

Pin Count :

4

ECCN Code :

EAR99

JEDEC-95 Code :

TO-268

Polarity/Channel Type :

N-Channel

Turn-Off Delay Time :

40 ns

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

12 ns

Resistance :

80mOhm

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

1000 mJ

FET Type :

N-Channel

Power Dissipation-Max (Abs) :

300 W

Package :

Tube