IXFT340N075T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

HiPerFET

Max Power Dissipation :

935 W

Vgs (Max) :

--

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Product Category :

MOSFET

DS Breakdown Voltage-Min :

75V

Number of Elements :

1

Product Status :

Active

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

340A

Number of Channels :

1 Channel

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 175 C

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

RoHS :

Details

Input Capacitance :

19 nF

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Base Product Number :

IXFT340

Series :

GigaMOS™, HiPerFET™, TrenchT2™

Additional Feature :

AVALANCHE RATED

Supplier Device Package :

TO-268

FET Type :

N-Channel

Case Connection :

DRAIN

FET Feature :

--

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 100A, 10V

Brand :

IXYS

Terminal Finish :

Matte Tin (Sn)

Channel Mode :

Enhancement

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Pin Count :

4

Mounting Type :

Surface Mount

Mounting Style :

SMD/SMT

Mount :

Surface Mount

Transistor Element Material :

SILICON

Rds On Max :

3.2 mΩ

Transistor Polarity :

N-Channel

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Power Dissipation-Max :

935W Tc

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

26 Weeks

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

960 mJ

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

4V @ 3mA

Current - Continuous Drain (Id) @ 25°C :

340A Tc

Packaging :

Tube

Package :

Tube

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Product Type :

MOSFET

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

16.05 mm

Drain to Source Voltage (Vdss) :

75V

Published :

2009

Type :

TrenchT2 HiperFET Power MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

850A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

50 ns

Pbfree Code :

yes

JESD-609 Code :

e3

Width :

14 mm

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Power Dissipation (Max) :

935W (Tc)

Height :

5.1 mm