IXFT30N50Q3

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Mfr.Part #
IXFT30N50Q3
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 30A TO268
Stock
23,173
In Stock :
23,173

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Vgs (Max) :
±20V
Number of Pins :
3
Drain to Source Voltage (Vdss) :
500V
Length :
16.05mm
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
30 A
FET Feature :
--
JESD-30 Code :
R-PSSO-G2
Number of Channels :
1 Channel
Element Configuration :
Single
Product Type :
MOSFET
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.2Ohm
Gate to Source Voltage (Vgs) :
30V
Brand :
IXYS
Terminal Finish :
Matte Tin (Sn)
Power Dissipation :
690W
Qualification Status :
Not Qualified
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
90A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Category :
MOSFET
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
26 Weeks
Surface Mount :
yes
Transistor Application :
SWITCHING
Polarity/Channel Type :
N-Channel
Height :
5.1mm
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Surface Mount
Channel Mode :
Enhancement
Drain to Source Breakdown Voltage :
500V
Number of Terminals :
2
Operating Mode :
ENHANCEMENT MODE
Tradename :
HiPerFET
Pin Count :
4
Rise Time :
250ns
Minimum Operating Temperature :
- 55 C
Turn-Off Delay Time :
26 ns
DS Breakdown Voltage-Min :
500 V
Published :
2011
Power Dissipation-Max :
690W Tc
Transistor Element Material :
SILICON
Supplier Device Package :
TO-268
Continuous Drain Current (ID) :
30A
Package Shape :
RECTANGULAR
Mounting Type :
Surface Mount
Configuration :
Single
Width :
14mm
JEDEC-95 Code :
TO-268AA
Mounting Style :
SMD/SMT
Input Capacitance (Ciss) (Max) @ Vds :
3200pF @ 25V
Transistor Polarity :
N-Channel
Package :
Tube
Number of Terminations :
2
Series :
HiPerFET™
Manufacturer :
IXYS
Power Dissipation (Max) :
690W (Tc)
Reach Compliance Code :
Unknown
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Terminal Form :
Gull wing
Power Dissipation-Max (Abs) :
690 W
Number of Elements :
1
Turn On Delay Time :
14 ns
Maximum Operating Temperature :
+ 150 C
Avalanche Energy Rating (Eas) :
1500 mJ
JESD-609 Code :
e3
Packaging :
Tube
Transistor Type :
1 N-Channel
Base Product Number :
IXFT30
Rds On (Max) @ Id, Vgs :
200m Ω @ 15A, 10V
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
RoHS :
Details
Product Status :
Active
Datasheets
IXFT30N50Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT30N50Q3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXFT30N50Q3 pinout, IXFT30N50Q3 datasheet PDF, IXFT30N50Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT30N50Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT30N50Q3


N-Channel Tube 200m Ω @ 15A, 10V ±20V 3200pF @ 25V 62nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT30N50Q3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 30 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 90A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFT30N50Q3 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 90A.
a 500V drain to source voltage (Vdss)


IXFT30N50Q3 Applications


There are a lot of IXYS
IXFT30N50Q3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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