IXFT30N50Q3
- Mfr.Part #
- IXFT30N50Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO268
- Stock
- 23,173
- In Stock :
- 23,173
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 500V
- Length :
- 16.05mm
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 30 A
- FET Feature :
- --
- JESD-30 Code :
- R-PSSO-G2
- Number of Channels :
- 1 Channel
- Element Configuration :
- Single
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.2Ohm
- Gate to Source Voltage (Vgs) :
- 30V
- Brand :
- IXYS
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 690W
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 90A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Category :
- MOSFET
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 26 Weeks
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- Height :
- 5.1mm
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Channel Mode :
- Enhancement
- Drain to Source Breakdown Voltage :
- 500V
- Number of Terminals :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Tradename :
- HiPerFET
- Pin Count :
- 4
- Rise Time :
- 250ns
- Minimum Operating Temperature :
- - 55 C
- Turn-Off Delay Time :
- 26 ns
- DS Breakdown Voltage-Min :
- 500 V
- Published :
- 2011
- Power Dissipation-Max :
- 690W Tc
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-268
- Continuous Drain Current (ID) :
- 30A
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- Width :
- 14mm
- JEDEC-95 Code :
- TO-268AA
- Mounting Style :
- SMD/SMT
- Input Capacitance (Ciss) (Max) @ Vds :
- 3200pF @ 25V
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Number of Terminations :
- 2
- Series :
- HiPerFET™
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 690W (Tc)
- Reach Compliance Code :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Terminal Form :
- Gull wing
- Power Dissipation-Max (Abs) :
- 690 W
- Number of Elements :
- 1
- Turn On Delay Time :
- 14 ns
- Maximum Operating Temperature :
- + 150 C
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Transistor Type :
- 1 N-Channel
- Base Product Number :
- IXFT30
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- RoHS :
- Details
- Product Status :
- Active
- Datasheets
- IXFT30N50Q3

N-Channel Tube 200m Ω @ 15A, 10V ±20V 3200pF @ 25V 62nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT30N50Q3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 30 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 90A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFT30N50Q3 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 90A.
a 500V drain to source voltage (Vdss)
IXFT30N50Q3 Applications
There are a lot of IXYS
IXFT30N50Q3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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