IXFT24N80P

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Mfr.Part #
IXFT24N80P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 800V 24A TO268
Stock
31,776
In Stock :
31,776

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Category :
MOSFET
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
Transistor Type :
1 N-Channel
Tradename :
HiPerFET
Avalanche Energy Rating (Eas) :
1500 mJ
Reach Compliance Code :
not_compliant
Turn-Off Delay Time :
75 ns
Operating Mode :
ENHANCEMENT MODE
Manufacturer :
IXYS
Surface Mount :
yes
FET Type :
N-Channel
Case Connection :
DRAIN
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Drain to Source Breakdown Voltage :
800V
Configuration :
Single
Base Product Number :
IXFT24
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED
Series :
HiPerFET™, PolarHT™
Supplier Device Package :
TO-268
Product Status :
Active
Length :
16.05 mm
JESD-609 Code :
e3
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
5V @ 4mA
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
650W (Tc)
Factory Lead Time :
26 Weeks
Number of Terminals :
2
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Surface Mount
DS Breakdown Voltage-Min :
800 V
Mounting Style :
SMD/SMT
Drain to Source Voltage (Vdss) :
800V
Input Capacitance (Ciss) (Max) @ Vds :
7200pF @ 25V
Rise Time :
27ns
Height :
5.1 mm
Transistor Application :
SWITCHING
Pin Count :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Fall Time (Typ) :
24 ns
Gate to Source Voltage (Vgs) :
30V
Package :
Tube
Minimum Operating Temperature :
- 55 C
Continuous Drain Current (ID) :
24A
Published :
2006
Transistor Polarity :
N-Channel
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
Terminal Finish :
Matte Tin (Sn)
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Brand :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±30V
Terminal Form :
Gull wing
JESD-30 Code :
R-PSSO-G2
Drain-source On Resistance-Max :
0.4Ohm
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Power Dissipation-Max (Abs) :
650 W
Power Dissipation :
650W
Power Dissipation-Max :
650W Tc
Channel Mode :
Enhancement
Element Configuration :
Single
Width :
14 mm
Number of Terminations :
2
Packaging :
Tube
FET Feature :
--
Drain Current-Max (Abs) (ID) :
24 A
Pulsed Drain Current-Max (IDM) :
55A
JEDEC-95 Code :
TO-268AA
Rds On (Max) @ Id, Vgs :
400m Ω @ 12A, 10V
Datasheets
IXFT24N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT24N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, IXFT24N80P pinout, IXFT24N80P datasheet PDF, IXFT24N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT24N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT24N80P


N-Channel Tube 400m Ω @ 12A, 10V ±30V 7200pF @ 25V 105nC @ 10V 800V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT24N80P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 24A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.A device can conduct a maximum continuous current of [24 A] according to its drain current.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 55A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFT24N80P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 55A.
a 800V drain to source voltage (Vdss)


IXFT24N80P Applications


There are a lot of IXYS
IXFT24N80P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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