IXFT24N50

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Mfr.Part #
IXFT24N50
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 24A TO268
Stock
14,389
In Stock :
14,389

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
500 V
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
Transistor Application :
SWITCHING
Minimum Operating Temperature :
- 55 C
Mounting Type :
Surface Mount
Number of Elements :
1
Brand :
IXYS
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Manufacturer :
IXYS
Configuration :
Single
Number of Channels :
1 Channel
Polarity/Channel Type :
N-Channel
Published :
2002
Transistor Type :
1 N-Channel
Drain to Source Breakdown Voltage :
500V
Turn-Off Delay Time :
65 ns
Tradename :
HyperFET
Case Connection :
DRAIN
Power Dissipation :
300W
Pulsed Drain Current-Max (IDM) :
96A
FET Feature :
--
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Package :
Tube
Power Dissipation-Max (Abs) :
300 W
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
4V @ 4mA
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-G2
Mount :
Surface Mount
Maximum Operating Temperature :
+ 150 C
Fall Time (Typ) :
30 ns
Drain Current-Max (Abs) (ID) :
24 A
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Length :
16.05 mm
Series :
HiPerFET™
Rds On (Max) @ Id, Vgs :
230m Ω @ 12A, 10V
Pin Count :
3
Power Dissipation (Max) :
300W (Tc)
Drain to Source Voltage (Vdss) :
500V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
300W Tc
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Width :
14 mm
Continuous Drain Current (ID) :
24A
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Product Status :
Obsolete
JEDEC-95 Code :
TO-268AA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Matte Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
2
Terminal Form :
Gull wing
Product Category :
MOSFET
Height :
5.1 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Packaging :
Tube
Gate to Source Voltage (Vgs) :
20V
Drain-source On Resistance-Max :
0.23Ohm
Rise Time :
33ns
Surface Mount :
yes
Terminal Position :
Single
Base Product Number :
IXFT24
Reach Compliance Code :
not_compliant
Channel Mode :
Enhancement
Number of Terminals :
2
Mounting Style :
SMD/SMT
Supplier Device Package :
TO-268
Datasheets
IXFT24N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT24N50 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Terminations:2, IXFT24N50 pinout, IXFT24N50 datasheet PDF, IXFT24N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT24N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT24N50


N-Channel Tube 230m Ω @ 12A, 10V ±20V 4200pF @ 25V 160nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT24N50 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4200pF @ 25V.This device conducts a continuous drain current (ID) of 24A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 24 A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 96A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFT24N50 Features


a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 96A.
a 500V drain to source voltage (Vdss)


IXFT24N50 Applications


There are a lot of IXYS
IXFT24N50 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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