IXFT16N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Product Category :

MOSFET

Drain Current-Max (Abs) (ID) :

16 A

Continuous Drain Current (ID) :

16A

Max Power Dissipation :

660 W

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

SMD/SMT

Rds On (Max) @ Id, Vgs :

950m Ω @ 500mA, 10V

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Type :

Polar HiPerFET Power MOSFET

Turn-Off Delay Time :

66 ns

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

N-Channel

Base Product Number :

IXFT16

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

35A

Product Status :

Active

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Details

Published :

2008

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Surface Mount :

yes

Power Dissipation-Max (Abs) :

660 W

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.95Ohm

Product Type :

MOSFET

Rds On Max :

950 mΩ

Configuration :

Single

Case Connection :

DRAIN

Series :

HiPerFET™, PolarP2™

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Terminations :

2

Brand :

IXYS

Min Operating Temperature :

-55 °C

Max Operating Temperature :

150 °C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

Manufacturer :

IXYS

Width :

14 mm

Drain to Source Breakdown Voltage :

1.2kV

Tradename :

HiPerFET

Transistor Type :

1 N-Channel

Pin Count :

4

JEDEC-95 Code :

TO-268AA

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

1200V

Number of Terminals :

2

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Supplier Device Package :

TO-268

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

660W Tc

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

JESD-609 Code :

e3

FET Feature :

--

Fall Time (Typ) :

35 ns

Power Dissipation :

660W

DS Breakdown Voltage-Min :

1200 V

Transistor Polarity :

N-Channel

Input Capacitance :

6.9 nF

Length :

16.05 mm

Mounting Type :

Surface Mount

Rise Time :

28ns

Channel Mode :

Enhancement

Factory Lead Time :

26 Weeks

Pbfree Code :

yes

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Minimum Operating Temperature :

- 55 C

Power Dissipation (Max) :

660W (Tc)

Avalanche Energy Rating (Eas) :

800 mJ

Input Capacitance (Ciss) (Max) @ Vds :

6900pF @ 25V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

5.1 mm

Package :

Tube

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain to Source Resistance :

950 mΩ