IXFT150N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Terminal Form :

Gull wing

ECCN Code :

EAR99

Power Dissipation (Max) :

890W (Tc)

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

11700pF @ 25V

Factory Lead Time :

26 Weeks

RoHS :

Details

Product Type :

MOSFET

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

15m Ω @ 75A, 10V

Power Dissipation-Max :

890W Tc

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Series :

HiPerFET™, TrenchT2™

Continuous Drain Current (ID) :

150A

Transistor Polarity :

N-Channel

DS Breakdown Voltage-Min :

200V

Drain to Source Voltage (Vdss) :

200V

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Vgs(th) (Max) @ Id :

5V @ 4mA

Base Product Number :

IXFT150

Transistor Application :

SWITCHING

Pin Count :

4

Mounting Type :

Surface Mount

Mounting Style :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Additional Feature :

AVALANCHE RATED

Package :

Tube

FET Feature :

--

Manufacturer :

IXYS

Mount :

Surface Mount

Published :

2011

Brand :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

375A

Number of Elements :

1

Product Category :

MOSFET

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

1500 mJ

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Packaging :

Tube

JESD-609 Code :

e3

Case Connection :

DRAIN

Tradename :

HiPerFET

Supplier Device Package :

TO-268

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

177nC @ 10V

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.015Ohm