IXFA7N100P

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Mfr.Part #
IXFA7N100P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 7A TO263
Stock
2,362
In Stock :
2,362

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Base Product Number :
IXFA7N100
Tradename :
HiPerFET
RoHS :
Details
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
1000V
Continuous Drain Current Id :
7A
Type :
Polar HiPerFET Power MOSFET
Polarity/Channel Type :
N-Channel
Number of Channels :
1 Channel
JEDEC-95 Code :
TO-263AB
Power Dissipation-Max (Abs) :
300 W
JESD-609 Code :
e3
Drain-source On Resistance-Max :
1.9 Ω
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Style :
SMD/SMT
Pin Count :
4
Mount :
Surface Mount
Transistor Application :
SWITCHING
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
18A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
MOSFET
Supplier Device Package :
TO-263 (IXFA)
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
300W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED
Manufacturer :
IXYS
Series :
HiPerFET™, PolarP2™
Continuous Drain Current (ID) :
7A
Product Status :
Active
Width :
10.41 mm
Minimum Operating Temperature :
- 55 C
Number of Terminations :
2
Configuration :
SINGLE WITH BUILT-IN DIODE
Brand :
IXYS
Power Dissipation :
300W
Drain Current-Max (Abs) (ID) :
7A
Vgs (Max) :
±30V
Height :
4.83 mm
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
1.9 Ω @ 3.5A, 10V
Length :
9.65 mm
Operating Temperature :
-55°C~150°C TJ
Channel Mode :
Enhancement
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Qualification Status :
Not Qualified
Channel Type :
N Channel
Number of Elements :
1
Mounting Type :
Surface Mount
Avalanche Energy Rating (Eas) :
300 mJ
Factory Lead Time :
30 Weeks
Number of Terminals :
2
Qualification :
-
Lead Free :
Lead Free
Product Type :
MOSFET
Terminal Finish :
Matte Tin (Sn)
Packaging :
Tube
Surface Mount :
yes
JESD-30 Code :
R-PSSO-G2
Published :
2014
Terminal Form :
Gull wing
Power Dissipation (Max) :
300W (Tc)
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Reach Compliance Code :
not_compliant
Package :
Tube
Package Shape :
RECTANGULAR
Maximum Operating Temperature :
+ 150 C
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Transistor Polarity :
N-Channel
Rise Time :
49 ns
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
1000V
Vgs(th) (Max) @ Id :
6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2590pF @ 25V
Datasheets
IXFA7N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA7N100P from Chip IC,where excellence meets affordability. This product stands out with its Type:Polar HiPerFET Power MOSFET, Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, IXFA7N100P pinout, IXFA7N100P datasheet PDF, IXFA7N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA7N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA7N100P


N-Channel Tube 1.9 Ω @ 3.5A, 10V ±30V 2590pF @ 25V 47nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA7N100P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 300 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2590pF @ 25V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 7A.A maximum pulsed drain current of 18A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFA7N100P Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 7A
based on its rated peak drain current 18A.
a 1000V drain to source voltage (Vdss)


IXFA7N100P Applications


There are a lot of IXYS
IXFA7N100P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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