IXFA130N10T2
- Mfr.Part #
- IXFA130N10T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO263
- Stock
- 17,314
- In Stock :
- 17,314
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- JESD-30 Code :
- R-PSSO-G2
- Drain Current-Max (Abs) (ID) :
- 130 A
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Mounting Type :
- Surface Mount
- Input Capacitance :
- 6.6 nF
- Published :
- 2009
- Maximum Operating Temperature :
- + 175 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Pbfree Code :
- yes
- Transistor Type :
- 1 N-Channel
- Mounting Style :
- SMD/SMT
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 360W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 360 W
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 130A
- Tradename :
- HiPerFET
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Terminal Position :
- Single
- FET Feature :
- --
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.0091Ohm
- Terminal Finish :
- Matte Tin (Sn)
- Reach Compliance Code :
- not_compliant
- Channel Mode :
- Enhancement
- Case Connection :
- DRAIN
- Brand :
- IXYS
- Supplier Device Package :
- TO-263 (IXFA)
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Manufacturer :
- IXYS
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Mount :
- Surface Mount
- Rds On Max :
- 9.1 mΩ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 65A, 10V
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Tube
- Power Dissipation-Max :
- 360W Tc
- Max Power Dissipation :
- 360 W
- ECCN Code :
- EAR99
- Transistor Polarity :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS :
- Details
- Pulsed Drain Current-Max (IDM) :
- 300A
- Packaging :
- Tube
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- Number of Channels :
- 1 Channel
- Factory Lead Time :
- 30 Weeks
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Minimum Operating Temperature :
- - 55 C
- Base Product Number :
- IXFA130
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 100V
- Surface Mount :
- yes
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 2
- Datasheets
- IXFA130N10T2

N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA130N10T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFA130N10T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)
IXFA130N10T2 Applications
There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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