IXFA130N10T2
- Mfr.Part #
- IXFA130N10T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO263
- Stock
- 17,314
- In Stock :
- 17,314
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Manufacturer :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 300A
- JESD-30 Code :
- R-PSSO-G2
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 65A, 10V
- FET Feature :
- --
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn)
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 100V
- Power Dissipation-Max :
- 360W Tc
- Transistor Application :
- SWITCHING
- Tradename :
- HiPerFET
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Input Capacitance :
- 6.6 nF
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- Published :
- 2009
- Drain to Source Voltage (Vdss) :
- 100V
- Continuous Drain Current (ID) :
- 130A
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXFA130
- Max Power Dissipation :
- 360 W
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 30 Weeks
- Mounting Style :
- SMD/SMT
- Reach Compliance Code :
- not_compliant
- Supplier Device Package :
- TO-263 (IXFA)
- Drain-source On Resistance-Max :
- 0.0091Ohm
- ECCN Code :
- EAR99
- RoHS :
- Details
- Mounting Type :
- Surface Mount
- Packaging :
- Tube
- Channel Mode :
- Enhancement
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Product Type :
- MOSFET
- Number of Terminals :
- 2
- Rds On Max :
- 9.1 mΩ
- Number of Elements :
- 1
- Power Dissipation (Max) :
- 360W (Tc)
- Case Connection :
- DRAIN
- Package :
- Tube
- Product Category :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 130 A
- Maximum Operating Temperature :
- + 175 C
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Brand :
- IXYS
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Product Status :
- Active
- Pin Count :
- 3
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max (Abs) :
- 360 W
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Minimum Operating Temperature :
- - 55 C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Polarity/Channel Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Datasheets
- IXFA130N10T2

N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA130N10T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFA130N10T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)
IXFA130N10T2 Applications
There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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