IXFA130N10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Case Connection :

DRAIN

Pin Count :

4

Series :

TrenchMV™

FET Feature :

--

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1 Channel

FET Type :

N-Channel

Number of Terminations :

2

Transistor Polarity :

N-Channel

JEDEC-95 Code :

TO-263AB

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

350A

Product Status :

Active

Operating Temperature :

-55°C~175°C TJ

Input Capacitance :

5.08 nF

Package Shape :

RECTANGULAR

Base Product Number :

IXFA130

RoHS :

Compliant

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 10V

Product Type :

MOSFET

Power Dissipation (Max) :

360W (Tc)

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Power Dissipation-Max :

360W Tc

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Brand :

IXYS

Rds On Max :

9.1 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

5080pF @ 25V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

130 A

Number of Elements :

1

Mounting Type :

Surface Mount

Supplier Device Package :

TO-263 (IXFA)

Tradename :

HiPerFET

Drain to Source Voltage (Vdss) :

100V

Number of Terminals :

2

Continuous Drain Current (ID) :

130A

Published :

2008

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Max Power Dissipation :

360 W

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

Transistor Type :

1 N-Channel

Drain-source On Resistance-Max :

0.0091Ohm

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Power Dissipation-Max (Abs) :

360 W

DS Breakdown Voltage-Min :

100V

Transistor Element Material :

SILICON

Package :

Tube

Avalanche Energy Rating (Eas) :

750 mJ

Product Category :

MOSFET

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Style :

SMD/SMT

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 25A, 10V

JESD-609 Code :

e3

Transistor Application :

SWITCHING