IXFA130N10T

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Mfr.Part #
IXFA130N10T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO263
Stock
25,548
In Stock :
25,548

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package :
Tube
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
750 mJ
Tradename :
HiPerFET
Mounting Style :
SMD/SMT
Qualification Status :
Not Qualified
Pbfree Code :
yes
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
5080pF @ 25V
Pulsed Drain Current-Max (IDM) :
350A
Brand :
IXYS
Max Power Dissipation :
360 W
Case Connection :
DRAIN
RoHS :
Compliant
Drain to Source Voltage (Vdss) :
100V
Product Type :
MOSFET
Polarity/Channel Type :
N-Channel
Rds On Max :
9.1 mΩ
Vgs (Max) :
--
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Series :
TrenchMV™
Gate Charge (Qg) (Max) @ Vgs :
104nC @ 10V
JESD-30 Code :
R-PSSO-G2
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Product Status :
Active
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 25A, 10V
JEDEC-95 Code :
TO-263AB
Power Dissipation-Max :
360W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
130 A
Product Category :
MOSFET
Drain-source On Resistance-Max :
0.0091Ohm
FET Type :
N-Channel
Published :
2008
DS Breakdown Voltage-Min :
100V
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Mounting Type :
Surface Mount
Transistor Type :
1 N-Channel
Pin Count :
4
Continuous Drain Current (ID) :
130A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
TO-263 (IXFA)
Number of Elements :
1
JESD-609 Code :
e3
Surface Mount :
yes
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Number of Terminals :
2
Operating Temperature :
-55°C~175°C TJ
Mount :
Surface Mount
Power Dissipation-Max (Abs) :
360 W
Base Product Number :
IXFA130
Manufacturer :
IXYS
FET Feature :
--
Terminal Finish :
Matte Tin (Sn)
Number of Terminations :
2
Package Shape :
RECTANGULAR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
360W (Tc)
Packaging :
Tube
Reach Compliance Code :
not_compliant
Number of Channels :
1 Channel
Transistor Polarity :
N-Channel
Input Capacitance :
5.08 nF
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Number of Channels:1 Channel, IXFA130N10T pinout, IXFA130N10T datasheet PDF, IXFA130N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA130N10T


N-Channel Tube 9.1m Ω @ 25A, 10V -- 5080pF @ 25V 104nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA130N10T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 750 mJ.A device's maximal input capacitance is 5080pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 130A, which represents the maximum continuous current it can conduct.In this device, the drain current is 130 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 350A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFA130N10T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 350A.
a 100V drain to source voltage (Vdss)


IXFA130N10T Applications


There are a lot of IXYS
IXFA130N10T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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