IXFA12N50P

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Mfr.Part #
IXFA12N50P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 500V 12A TO263
Stock
298
In Stock :
298

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Vgs (Max) :
±30V
RoHS :
Details
Mounting Style :
SMD/SMT
Tradename :
HiPerFET
Supplier Device Package :
TO-263 (IXFA)
Product Category :
MOSFET
FET Feature :
--
Drain to Source Voltage (Vdss) :
500V
Input Capacitance (Ciss) (Max) @ Vds :
1830pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Number of Terminations :
2
JESD-30 Code :
R-PSSO-G2
Pulsed Drain Current-Max (IDM) :
30A
Drain-source On Resistance-Max :
0.5Ohm
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
12A
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2006
Turn-Off Delay Time :
65 ns
Element Configuration :
Single
Product Type :
MOSFET
Mount :
Surface Mount
Package :
Tube
Surface Mount :
yes
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS
Number of Terminals :
2
Height :
16 mm
JESD-609 Code :
e3
Maximum Operating Temperature :
+ 150 C
Rise Time :
27ns
Terminal Position :
Single
Type :
Polar Power MOSFET HiPerFET
FET Type :
N-Channel
Pbfree Code :
yes
Fall Time (Typ) :
20 ns
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation-Max (Abs) :
200 W
Vgs(th) (Max) @ Id :
5.5V @ 1mA
Drain to Source Breakdown Voltage :
500V
Power Dissipation-Max :
200W Tc
Qualification Status :
Not Qualified
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Power Dissipation (Max) :
200W (Tc)
Terminal Finish :
Matte Tin (Sn)
Voltage - Rated DC :
500V
JEDEC-95 Code :
TO-263AB
Configuration :
Single
Rds On (Max) @ Id, Vgs :
500m Ω @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Package Shape :
RECTANGULAR
Avalanche Energy Rating (Eas) :
600 mJ
Minimum Operating Temperature :
- 55 C
Current Rating :
12A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Product Number :
IXFA12
Width :
4.83 mm
Radiation Hardening :
No
Number of Channels :
1 Channel
Transistor Type :
1 N-Channel
Number of Elements :
1
DS Breakdown Voltage-Min :
500 V
Reach Compliance Code :
not_compliant
Polarity/Channel Type :
N-Channel
Product Status :
Active
Factory Lead Time :
30 Weeks
Lead Free :
Lead Free
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
12 A
Pin Count :
4
Series :
HiPerFET™, PolarP2™
Power Dissipation :
200W
Channel Mode :
Enhancement
Mounting Type :
Surface Mount
Length :
10.66 mm
Gate to Source Voltage (Vgs) :
30V
Terminal Form :
Gull wing
Packaging :
Tube
Datasheets
IXFA12N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA12N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Type:Polar Power MOSFET HiPerFET, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, Mounting Type:Surface Mount, IXFA12N50P pinout, IXFA12N50P datasheet PDF, IXFA12N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA12N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA12N50P


N-Channel Tube 500m Ω @ 6A, 10V ±30V 1830pF @ 25V 29nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA12N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 600 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1830pF @ 25V.This device has a continuous drain current (ID) of [12A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 12 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 30A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFA12N50P Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 30A.
a 500V drain to source voltage (Vdss)


IXFA12N50P Applications


There are a lot of IXYS
IXFA12N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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