IXFA12N50P
- Mfr.Part #
- IXFA12N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 12A TO263
- Stock
- 298
- In Stock :
- 298
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Reach Compliance Code :
- not_compliant
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-263AB
- Mounting Style :
- SMD/SMT
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 12 A
- Case Connection :
- DRAIN
- Number of Terminals :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 6A, 10V
- Number of Channels :
- 1 Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Tradename :
- HiPerFET
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Power Dissipation-Max :
- 200W Tc
- Turn-Off Delay Time :
- 65 ns
- Power Dissipation (Max) :
- 200W (Tc)
- Number of Terminations :
- 2
- FET Feature :
- --
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±30V
- Drain-source On Resistance-Max :
- 0.5Ohm
- Product Status :
- Active
- Manufacturer :
- IXYS
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- Current Rating :
- 12A
- Radiation Hardening :
- No
- Configuration :
- Single
- Power Dissipation :
- 200W
- Product Category :
- MOSFET
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Height :
- 16 mm
- Rise Time :
- 27ns
- Pulsed Drain Current-Max (IDM) :
- 30A
- Element Configuration :
- Single
- Width :
- 4.83 mm
- Continuous Drain Current (ID) :
- 12A
- Channel Mode :
- Enhancement
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max (Abs) :
- 200 W
- Qualification Status :
- Not Qualified
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Surface Mount
- Brand :
- IXYS
- Series :
- HiPerFET™, PolarP2™
- RoHS :
- Details
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFA12
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Supplier Device Package :
- TO-263 (IXFA)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 500V
- Product Type :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Vgs(th) (Max) @ Id :
- 5.5V @ 1mA
- Published :
- 2006
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1830pF @ 25V
- DS Breakdown Voltage-Min :
- 500 V
- Length :
- 10.66 mm
- Drain to Source Voltage (Vdss) :
- 500V
- Fall Time (Typ) :
- 20 ns
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Factory Lead Time :
- 30 Weeks
- Voltage - Rated DC :
- 500V
- Type :
- Polar Power MOSFET HiPerFET
- Datasheets
- IXFA12N50P

N-Channel Tube 500m Ω @ 6A, 10V ±30V 1830pF @ 25V 29nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA12N50P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 600 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1830pF @ 25V.This device has a continuous drain current (ID) of [12A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 12 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 30A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFA12N50P Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 30A.
a 500V drain to source voltage (Vdss)
IXFA12N50P Applications
There are a lot of IXYS
IXFA12N50P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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