IXFA12N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-263 (IXFA)

Vgs (Max) :

±30V

Base Product Number :

IXFA12

Operating Temperature :

-55°C~150°C TJ

Brand :

IXYS

Transistor Type :

1 N-Channel

Pbfree Code :

yes

Power Dissipation :

200W

Power Dissipation-Max :

200W Tc

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

20 ns

Current Rating :

12A

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

12 A

Qualification Status :

Not Qualified

Factory Lead Time :

30 Weeks

FET Type :

N-Channel

FET Feature :

--

JEDEC-95 Code :

TO-263AB

DS Breakdown Voltage-Min :

500 V

Package :

Tube

Polarity/Channel Type :

N-Channel

Transistor Polarity :

N-Channel

Radiation Hardening :

No

Length :

10.66 mm

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

500m Ω @ 6A, 10V

Avalanche Energy Rating (Eas) :

600 mJ

Width :

4.83 mm

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

30A

Drain to Source Voltage (Vdss) :

500V

Input Capacitance (Ciss) (Max) @ Vds :

1830pF @ 25V

Mounting Style :

SMD/SMT

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Transistor Element Material :

SILICON

Type :

Polar Power MOSFET HiPerFET

Manufacturer :

IXYS

Voltage - Rated DC :

500V

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

65 ns

Rise Time :

27ns

Published :

2006

Configuration :

Single

Drain to Source Breakdown Voltage :

500V

Tradename :

HiPerFET

Pin Count :

4

Maximum Operating Temperature :

+ 150 C

Height :

16 mm

Number of Terminals :

2

Product Type :

MOSFET

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Package Shape :

RECTANGULAR

Product Category :

MOSFET

Terminal Form :

Gull wing

RoHS :

Details

Lead Free :

Lead Free

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Series :

HiPerFET™, PolarP2™

Power Dissipation (Max) :

200W (Tc)

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Power Dissipation-Max (Abs) :

200 W

Drain-source On Resistance-Max :

0.5Ohm

Terminal Position :

Single

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Number of Elements :

1

Case Connection :

DRAIN

Continuous Drain Current (ID) :

12A

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount