IXFA12N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Channel Mode :

Enhancement

Product Type :

MOSFET

Operating Temperature :

-55°C~150°C TJ

Number of Terminals :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Brand :

IXYS

Package :

Tube

Mounting Type :

Surface Mount

Transistor Type :

1 N-Channel

Width :

4.83 mm

Mounting Style :

SMD/SMT

Drain to Source Voltage (Vdss) :

500V

Case Connection :

DRAIN

Tradename :

HiPerFET

Product Status :

Active

RoHS Status :

ROHS3 Compliant

Height :

16 mm

Terminal Position :

Single

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Published :

2006

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max (Abs) :

200 W

Packaging :

Tube

Length :

10.66 mm

Drain Current-Max (Abs) (ID) :

12 A

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Factory Lead Time :

30 Weeks

Power Dissipation :

200W

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Supplier Device Package :

TO-263 (IXFA)

Drain-source On Resistance-Max :

0.5Ohm

Package Shape :

RECTANGULAR

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Element Configuration :

Single

Series :

HiPerFET™, PolarP2™

Type :

Polar Power MOSFET HiPerFET

Gate to Source Voltage (Vgs) :

30V

Base Product Number :

IXFA12

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Current Rating :

12A

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1830pF @ 25V

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Surface Mount :

yes

Number of Channels :

1 Channel

Turn-Off Delay Time :

65 ns

Product Category :

MOSFET

Radiation Hardening :

No

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Number of Terminations :

2

Mount :

Surface Mount

Fall Time (Typ) :

20 ns

Rds On (Max) @ Id, Vgs :

500m Ω @ 6A, 10V

Pulsed Drain Current-Max (IDM) :

30A

JEDEC-95 Code :

TO-263AB

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

500V

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

200W (Tc)

Rise Time :

27ns

DS Breakdown Voltage-Min :

500 V

Power Dissipation-Max :

200W Tc

Transistor Application :

SWITCHING

RoHS :

Details

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

600 mJ

Manufacturer :

IXYS

FET Feature :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

12A

Voltage - Rated DC :

500V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V