IXFA110N15T2
- Mfr.Part #
- IXFA110N15T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 110A TO263
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HiPerFET™, TrenchT2™
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 2
- Number of Pins :
- 3
- Package :
- Tube
- Maximum Operating Temperature :
- + 175 C
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Published :
- 2007
- Minimum Operating Temperature :
- - 55 C
- Mount :
- Surface Mount
- Product Category :
- MOSFET
- RoHS Status :
- RoHS Compliant
- Power Dissipation (Max) :
- 480W (Tc)
- Power Dissipation-Max (Abs) :
- 480 W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-263AB
- Operating Temperature :
- -55°C~175°C TJ
- Qualification Status :
- Not Qualified
- Transistor Type :
- 1 N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 16 ns
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-263 (D2Pak)
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 8600pF @ 25V
- Base Product Number :
- IXFA110
- Continuous Drain Current (ID) :
- 110A
- Drain-source On Resistance-Max :
- 0.013 Ω
- Power Dissipation-Max :
- 480W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 55A, 10V
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Terminal Finish :
- Matte Tin (Sn)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drain Current-Max (Abs) (ID) :
- 110 A
- Mounting Style :
- SMD/SMT
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- not_compliant
- Drain to Source Voltage (Vdss) :
- 150V
- Tradename :
- HiPerFET
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS :
- Details
- Channel Mode :
- Enhancement
- Pin Count :
- 4
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- N-Channel
- Brand :
- IXYS
- ECCN Code :
- EAR99
- Transistor Polarity :
- N-Channel
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 150V
- Factory Lead Time :
- 30 Weeks
- Surface Mount :
- yes
- Terminal Position :
- Single
- FET Feature :
- -
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Mounting Type :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Transistor Element Material :
- SILICON
- Datasheets
- IXFA110N15T2

N-Channel Tape & Reel (TR) 13m Ω @ 55A, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA110N15T2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 110 A.A maximum pulsed drain current of 300 A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFA110N15T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 300 A.
a 150V drain to source voltage (Vdss)
IXFA110N15T2 Applications
There are a lot of IXYS
IXFA110N15T2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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