IXFA10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Surface Mount :

yes

Pin Count :

3

Mounting Style :

SMD/SMT

Terminal Position :

Single

Element Configuration :

Single

Transistor Application :

SWITCHING

Pbfree Code :

yes

Product Type :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

1.1 Ω

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Product Category :

MOSFET

Transistor Type :

1 N-Channel

Manufacturer :

IXYS

Base Product Number :

IXFA10

DS Breakdown Voltage-Min :

800 V

Transistor Polarity :

N-Channel

Mount :

Surface Mount

FET Feature :

--

Brand :

IXYS

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

300W Tc

Turn-Off Delay Time :

62 ns

Number of Elements :

1

Number of Pins :

3

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Number of Terminals :

3

Product Status :

Active

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Drain to Source Breakdown Voltage :

800V

REACH SVHC :

No SVHC

Power Dissipation (Max) :

300W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Factory Lead Time :

30 Weeks

Rise Time :

22ns

Power Dissipation-Max (Abs) :

300 W

Polarity/Channel Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

3

Package :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Tradename :

HiPerFET

Pulsed Drain Current-Max (IDM) :

30 A

FET Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

10A

JESD-609 Code :

e3

Power Dissipation :

300W

JESD-30 Code :

R-PSSO-G3

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

10 A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

10A Tc

ECCN Code :

EAR99

RoHS :

Details

Fall Time (Typ) :

22 ns

Minimum Operating Temperature :

- 55 C

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Series :

HiPerFET™, PolarHT™

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Threshold Voltage :

5.5V

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Published :

2006

Packaging :

Tube

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-263AA

Avalanche Energy Rating (Eas) :

600 mJ

Supplier Device Package :

TO-263 (IXFA)

Drain to Source Voltage (Vdss) :

800V