IXFA10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

10A

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Qualification Status :

Not Qualified

Threshold Voltage :

5.5V

Drain to Source Breakdown Voltage :

800V

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Series :

HiPerFET™, PolarHT™

Transistor Polarity :

N-Channel

Lead Free :

Lead Free

Number of Channels :

1 Channel

Number of Terminals :

3

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Drain Current-Max (Abs) (ID) :

10 A

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Type :

MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Power Dissipation (Max) :

300W (Tc)

Power Dissipation-Max :

300W Tc

Manufacturer :

IXYS

Published :

2006

Terminal Form :

Gull wing

Mount :

Surface Mount

Rise Time :

22ns

Product Status :

Active

Mounting Style :

SMD/SMT

Transistor Type :

1 N-Channel

Brand :

IXYS

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Product Category :

MOSFET

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Supplier Device Package :

TO-263 (IXFA)

Number of Elements :

1

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

300W

Pulsed Drain Current-Max (IDM) :

30 A

Turn-Off Delay Time :

62 ns

Vgs (Max) :

±30V

Number of Pins :

3

Power Dissipation-Max (Abs) :

300 W

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Pin Count :

3

Pbfree Code :

yes

Factory Lead Time :

30 Weeks

Drain-source On Resistance-Max :

1.1 Ω

Base Product Number :

IXFA10

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

Fall Time (Typ) :

22 ns

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Tradename :

HiPerFET

Operating Mode :

ENHANCEMENT MODE

Configuration :

Single

RoHS :

Details

FET Feature :

--

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

FET Type :

N-Channel

DS Breakdown Voltage-Min :

800 V

Case Connection :

DRAIN

JEDEC-95 Code :

TO-263AA

Packaging :

Tube

Avalanche Energy Rating (Eas) :

600 mJ

Operating Temperature :

-55°C~150°C TJ

Maximum Operating Temperature :

+ 150 C

Drain to Source Voltage (Vdss) :

800V