IXFA10N80P

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Mfr.Part #
IXFA10N80P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 800V 10A TO263
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
10A
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Matte Tin (Sn)
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 25V
Qualification Status :
Not Qualified
Threshold Voltage :
5.5V
Drain to Source Breakdown Voltage :
800V
Additional Feature :
AVALANCHE RATED
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
Series :
HiPerFET™, PolarHT™
Transistor Polarity :
N-Channel
Lead Free :
Lead Free
Number of Channels :
1 Channel
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
30V
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
Drain Current-Max (Abs) (ID) :
10 A
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Type :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
REACH SVHC :
No SVHC
Power Dissipation (Max) :
300W (Tc)
Power Dissipation-Max :
300W Tc
Manufacturer :
IXYS
Published :
2006
Terminal Form :
Gull wing
Mount :
Surface Mount
Rise Time :
22ns
Product Status :
Active
Mounting Style :
SMD/SMT
Transistor Type :
1 N-Channel
Brand :
IXYS
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Product Category :
MOSFET
Channel Mode :
Enhancement
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Supplier Device Package :
TO-263 (IXFA)
Number of Elements :
1
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSSO-G3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
300W
Pulsed Drain Current-Max (IDM) :
30 A
Turn-Off Delay Time :
62 ns
Vgs (Max) :
±30V
Number of Pins :
3
Power Dissipation-Max (Abs) :
300 W
Reach Compliance Code :
not_compliant
Mounting Type :
Surface Mount
Pin Count :
3
Pbfree Code :
yes
Factory Lead Time :
30 Weeks
Drain-source On Resistance-Max :
1.1 Ω
Base Product Number :
IXFA10
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Minimum Operating Temperature :
- 55 C
Fall Time (Typ) :
22 ns
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
Tradename :
HiPerFET
Operating Mode :
ENHANCEMENT MODE
Configuration :
Single
RoHS :
Details
FET Feature :
--
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
FET Type :
N-Channel
DS Breakdown Voltage-Min :
800 V
Case Connection :
DRAIN
JEDEC-95 Code :
TO-263AA
Packaging :
Tube
Avalanche Energy Rating (Eas) :
600 mJ
Operating Temperature :
-55°C~150°C TJ
Maximum Operating Temperature :
+ 150 C
Drain to Source Voltage (Vdss) :
800V
Datasheets
IXFA10N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IXFA10N80P pinout, IXFA10N80P datasheet PDF, IXFA10N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA10N80P


N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA10N80P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 600 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2050pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 10 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 62 ns.A maximum pulsed drain current of 30 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800 V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFA10N80P Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30 A.
a threshold voltage of 5.5V
a 800V drain to source voltage (Vdss)


IXFA10N80P Applications


There are a lot of IXYS
IXFA10N80P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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