IXFA10N80P

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Mfr.Part #
IXFA10N80P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 800V 10A TO263
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
HiPerFET™, PolarHT™
JEDEC-95 Code :
TO-263AA
Package :
Tube
Additional Feature :
AVALANCHE RATED
RoHS :
Details
Channel Mode :
Enhancement
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Number of Channels :
1 Channel
FET Feature :
--
JESD-609 Code :
e3
Pulsed Drain Current-Max (IDM) :
30 A
JESD-30 Code :
R-PSSO-G3
Transistor Polarity :
N-Channel
Polarity/Channel Type :
N-Channel
Threshold Voltage :
5.5V
Lead Free :
Lead Free
Drain Current-Max (Abs) (ID) :
10 A
Pin Count :
3
Reach Compliance Code :
not_compliant
DS Breakdown Voltage-Min :
800 V
Fall Time (Typ) :
22 ns
Product Category :
MOSFET
Case Connection :
DRAIN
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
800V
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
Number of Elements :
1
Terminal Form :
Gull wing
Gate to Source Voltage (Vgs) :
30V
FET Type :
N-Channel
Tradename :
HiPerFET
ECCN Code :
EAR99
Number of Pins :
3
Product Status :
Active
Turn-Off Delay Time :
62 ns
Number of Terminals :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Element Configuration :
Single
Rise Time :
22ns
Published :
2006
Product Type :
MOSFET
Terminal Finish :
Matte Tin (Sn)
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Surface Mount
Supplier Device Package :
TO-263 (IXFA)
Packaging :
Tube
Power Dissipation-Max :
300W Tc
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Avalanche Energy Rating (Eas) :
600 mJ
Power Dissipation-Max (Abs) :
300 W
Terminal Position :
Single
Factory Lead Time :
30 Weeks
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
10A
Operating Temperature :
-55°C~150°C TJ
Brand :
IXYS
Mounting Type :
Surface Mount
Base Product Number :
IXFA10
Number of Terminations :
3
Surface Mount :
yes
Vgs (Max) :
±30V
Power Dissipation (Max) :
300W (Tc)
Drain to Source Voltage (Vdss) :
800V
Power Dissipation :
300W
Configuration :
Single
Drain-source On Resistance-Max :
1.1 Ω
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Mounting Style :
SMD/SMT
Datasheets
IXFA10N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, IXFA10N80P pinout, IXFA10N80P datasheet PDF, IXFA10N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA10N80P


N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA10N80P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 600 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2050pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 10 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 62 ns.A maximum pulsed drain current of 30 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800 V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFA10N80P Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30 A.
a threshold voltage of 5.5V
a 800V drain to source voltage (Vdss)


IXFA10N80P Applications


There are a lot of IXYS
IXFA10N80P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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