IXFA10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

300W (Tc)

Gate to Source Voltage (Vgs) :

30V

Base Product Number :

IXFA10

Pulsed Drain Current-Max (IDM) :

30 A

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

800V

Transistor Polarity :

N-Channel

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Number of Pins :

3

Pin Count :

3

Brand :

IXYS

Number of Elements :

1

Manufacturer :

IXYS

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

300W Tc

FET Type :

N-Channel

DS Breakdown Voltage-Min :

800 V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G3

Drain to Source Breakdown Voltage :

800V

Number of Terminals :

3

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2006

Avalanche Energy Rating (Eas) :

600 mJ

Rise Time :

22ns

Element Configuration :

Single

Package Shape :

RECTANGULAR

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Supplier Device Package :

TO-263 (IXFA)

Number of Channels :

1 Channel

Product Status :

Active

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Style :

SMD/SMT

Series :

HiPerFET™, PolarHT™

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

RoHS :

Details

FET Feature :

--

Drain Current-Max (Abs) (ID) :

10 A

Drain-source On Resistance-Max :

1.1 Ω

Reach Compliance Code :

not_compliant

Tradename :

HiPerFET

Current - Continuous Drain (Id) @ 25°C :

10A Tc

REACH SVHC :

No SVHC

Pbfree Code :

yes

Product Type :

MOSFET

Power Dissipation :

300W

JESD-609 Code :

e3

Number of Terminations :

3

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-263AA

Factory Lead Time :

30 Weeks

Package :

Tube

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Power Dissipation-Max (Abs) :

300 W

Transistor Type :

1 N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Packaging :

Tube

Vgs (Max) :

±30V

Turn-Off Delay Time :

62 ns

Threshold Voltage :

5.5V

Configuration :

Single

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Channel Mode :

Enhancement

Continuous Drain Current (ID) :

10A

ECCN Code :

EAR99

Fall Time (Typ) :

22 ns

Maximum Operating Temperature :

+ 150 C

Operating Mode :

ENHANCEMENT MODE