IXFA6N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Power Dissipation-Max :

250W Tc

Transistor Polarity :

N-Channel

Tradename :

HiPerFET

JESD-30 Code :

R-PSSO-G2

Number of Channels :

1 Channel

HTS Code :

8541.90.00.00

Number of Pins :

3

Mounting Style :

SMD/SMT

Packaging :

Tube

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Package :

Tube

Reach Compliance Code :

not_compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Type :

Polar HiPerFET Power MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Resistance :

2.4 Ω

Published :

2011

Terminal Form :

Gull wing

Manufacturer :

IXYS

Drain Current-Max (Abs) (ID) :

6A

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Number of Terminations :

2

Power Dissipation-Max (Abs) :

250 W

Supplier Device Package :

TO-263 (IXFA)

Number of Terminals :

2

Base Product Number :

IXFA6N120

RoHS :

Compliant

Width :

10.41 mm

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 25V

Factory Lead Time :

30 Weeks

Rds On Max :

2.4 Ω

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 500mA, 10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Terminal Finish :

Matte Tin (Sn)

Maximum Operating Temperature :

+ 150 C

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

1200V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Package Shape :

RECTANGULAR

Product Type :

MOSFET

FET Feature :

--

Drain-source On Resistance-Max :

0.0024Ohm

ECCN Code :

EAR99

Surface Mount :

yes

Terminal Position :

Single

Height :

4.83 mm

Rise Time :

11 ns

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

5V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Brand :

IXYS

JEDEC-95 Code :

TO-263AA

Avalanche Energy Rating (Eas) :

300 mJ

Length :

9.65 mm

JESD-609 Code :

e3

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

1200V

Power Dissipation (Max) :

250W (Tc)

Max Power Dissipation :

250 W

Series :

HiPerFET™, PolarP2™

Continuous Drain Current (ID) :

6A

Minimum Operating Temperature :

- 55 C

Polarity/Channel Type :

N-Channel

Input Capacitance :

2.83 nF

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

18A

Channel Mode :

Enhancement