IXFA6N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0024Ohm

Pin Count :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Type :

Polar HiPerFET Power MOSFET

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 1mA

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

250W Tc

Avalanche Energy Rating (Eas) :

300 mJ

Package :

Tube

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Brand :

IXYS

FET Type :

N-Channel

Height :

4.83 mm

Vgs (Max) :

±30V

HTS Code :

8541.90.00.00

Package Shape :

RECTANGULAR

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

RoHS :

Compliant

Rds On Max :

2.4 Ω

Number of Terminals :

2

Rise Time :

11 ns

Continuous Drain Current (ID) :

6A

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Input Capacitance :

2.83 nF

Drain to Source Resistance :

2.4 Ω

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

1200V

Product Type :

MOSFET

Terminal Position :

Single

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

9.65 mm

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Supplier Device Package :

TO-263 (IXFA)

Minimum Operating Temperature :

- 55 C

Mounting Type :

Surface Mount

Manufacturer :

IXYS

JEDEC-95 Code :

TO-263AA

Base Product Number :

IXFA6N120

Number of Pins :

3

Max Power Dissipation :

250 W

Mounting Style :

SMD/SMT

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Channel Mode :

Enhancement

Width :

10.41 mm

Power Dissipation (Max) :

250W (Tc)

Factory Lead Time :

30 Weeks

DS Breakdown Voltage-Min :

1200V

Lead Free :

Lead Free

Power Dissipation-Max (Abs) :

250 W

Series :

HiPerFET™, PolarP2™

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 25V

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 500mA, 10V

Transistor Polarity :

N-Channel

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Pulsed Drain Current-Max (IDM) :

18A

Pbfree Code :

yes

Case Connection :

DRAIN

Terminal Form :

Gull wing

Tradename :

HiPerFET

Additional Feature :

AVALANCHE RATED

Number of Channels :

1 Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

--

Published :

2011

Reach Compliance Code :

not_compliant

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

6A