IXFA5N100P

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Mfr.Part #
IXFA5N100P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 1000V 5A TO263
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Matte Tin (Sn)
Manufacturer :
IXYS
Drain-source On Resistance-Max :
2.8 Ω
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS :
Details
JESD-609 Code :
e3
Vgs (Max) :
±30V
Base Product Number :
IXFA5N100
Case Connection :
DRAIN
Reach Compliance Code :
not_compliant
Rds On (Max) @ Id, Vgs :
2.8 Ω @ 2.5A, 10V
Product Type :
MOSFET
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
6V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HiPerFET™, PolarP2™
Power Dissipation-Max :
250W Tc
Power Dissipation (Max) :
250W (Tc)
Width :
10.41 mm
Channel Mode :
Enhancement
Height :
4.83 mm
Minimum Operating Temperature :
- 55 C
Number of Terminals :
2
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSSO-G2
Length :
9.65 mm
Transistor Application :
SWITCHING
Published :
2008
Mounting Style :
SMD/SMT
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Mounting Type :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation-Max (Abs) :
250 W
Rise Time :
13 ns
FET Type :
N-Channel
Surface Mount :
yes
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
1000V
Pin Count :
4
Package :
Tube
Pulsed Drain Current-Max (IDM) :
10A
Gate Charge (Qg) (Max) @ Vgs :
33.4nC @ 10V
JEDEC-95 Code :
TO-263AB
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Continuous Drain Current (ID) :
5A
Terminal Position :
Single
FET Feature :
--
Transistor Element Material :
SILICON
Product Category :
MOSFET
Avalanche Energy Rating (Eas) :
300 mJ
Pbfree Code :
yes
Factory Lead Time :
30 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
1830pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Type :
Polar Power MOSFET HiPerFET
Terminal Form :
Gull wing
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
TO-263 (IXFA)
Brand :
IXYS
Number of Elements :
1
Package Shape :
RECTANGULAR
Product Status :
Active
DS Breakdown Voltage-Min :
1000V
Number of Terminations :
2
Tradename :
HiPerFET
Configuration :
SINGLE WITH BUILT-IN DIODE
Additional Feature :
AVALANCHE RATED
Mount :
Surface Mount
Drain Current-Max (Abs) (ID) :
5A
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA5N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Type:Polar Power MOSFET HiPerFET, Number of Terminations:2, IXFA5N100P pinout, IXFA5N100P datasheet PDF, IXFA5N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA5N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA5N100P


N-Channel Tube 2.8 Ω @ 2.5A, 10V ±30V 1830pF @ 25V 33.4nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA5N100P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1830pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 10A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFA5N100P Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 5A
based on its rated peak drain current 10A.
a 1000V drain to source voltage (Vdss)


IXFA5N100P Applications


There are a lot of IXYS
IXFA5N100P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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