IXFA5N100P
- Mfr.Part #
- IXFA5N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 5A TO263
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Package Shape :
- RECTANGULAR
- Width :
- 10.41 mm
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 5A
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 2.8 Ω @ 2.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 1000V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- FET Type :
- N-Channel
- Product Status :
- Active
- Vgs (Max) :
- ±30V
- Power Dissipation (Max) :
- 250W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 13 ns
- Mounting Style :
- SMD/SMT
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Terminal Form :
- Gull wing
- Package :
- Tube
- Pbfree Code :
- yes
- Factory Lead Time :
- 30 Weeks
- Channel Mode :
- Enhancement
- Input Capacitance (Ciss) (Max) @ Vds :
- 1830pF @ 25V
- JEDEC-95 Code :
- TO-263AB
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- not_compliant
- Length :
- 9.65 mm
- Polarity/Channel Type :
- N-Channel
- Published :
- 2008
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 250W Tc
- Pulsed Drain Current-Max (IDM) :
- 10A
- Base Product Number :
- IXFA5N100
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 5A
- Brand :
- IXYS
- Series :
- HiPerFET™, PolarP2™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminals :
- 2
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 2.8 Ω
- Product Category :
- MOSFET
- Supplier Device Package :
- TO-263 (IXFA)
- Power Dissipation-Max (Abs) :
- 250 W
- FET Feature :
- --
- Number of Elements :
- 1
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 1000V
- Type :
- Polar Power MOSFET HiPerFET
- Terminal Finish :
- Matte Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 33.4nC @ 10V
- Minimum Operating Temperature :
- - 55 C
- Height :
- 4.83 mm
- JESD-609 Code :
- e3
- Tradename :
- HiPerFET
- Mount :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS :
- Details
- Pin Count :
- 4
- Maximum Operating Temperature :
- + 150 C
- Vgs(th) (Max) @ Id :
- 6V @ 250μA
- Datasheets
- IXFA5N100P

N-Channel Tube 2.8 Ω @ 2.5A, 10V ±30V 1830pF @ 25V 33.4nC @ 10V 1000V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA5N100P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1830pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 10A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1000V in order to maintain normal operation.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFA5N100P Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 5A
based on its rated peak drain current 10A.
a 1000V drain to source voltage (Vdss)
IXFA5N100P Applications
There are a lot of IXYS
IXFA5N100P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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