IXFA36N20X3
- Mfr.Part #
- IXFA36N20X3
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 36A TO263AA
- Stock
- 216
- In Stock :
- 216
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- MOSFET
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Subcategory :
- MOSFETs
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Details
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED
- Product Type :
- MOSFET
- Terminal Position :
- Single
- Tradename :
- HiPerFET
- FET Feature :
- --
- JESD-30 Code :
- R-PSSO-G2
- Series :
- HiPerFET™
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Maximum Operating Temperature :
- + 150 C
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Pulsed Drain Current-Max (IDM) :
- 50A
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1 Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1425pF @ 25V
- Minimum Operating Temperature :
- - 55 C
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXFA36
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 500μA
- Surface Mount :
- yes
- Drain Current-Max (Abs) (ID) :
- 36A
- Channel Mode :
- Enhancement
- Package :
- Tube
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain-source On Resistance-Max :
- 0.045Ohm
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 19 Weeks
- Number of Elements :
- 1
- Supplier Device Package :
- TO-263AA
- Drain to Source Voltage (Vdss) :
- 200V
- Brand :
- IXYS
- Rise Time :
- 30 ns
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 18A, 10V
- Power Dissipation (Max) :
- 176W (Tc)
- Mounting Style :
- SMD/SMT
- DS Breakdown Voltage-Min :
- 200V
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 176W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXFA36N20X3
IXFA36N20X3 Documents

N-Channel Tube 45m Ω @ 18A, 10V ±20V 1425pF @ 25V 21nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA36N20X3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The maximum input capacitance of this device is 1425pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 36A.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFA36N20X3 Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 50A.
a 200V drain to source voltage (Vdss)
IXFA36N20X3 Applications
There are a lot of IXYS
IXFA36N20X3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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