IXFA16N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Minimum Operating Temperature :

- 55 C

Product Status :

Active

Power Dissipation-Max :

300W Tc

Qualification Status :

Not Qualified

Resistance :

400mOhm

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Package Shape :

RECTANGULAR

Pulsed Drain Current-Max (IDM) :

40A

Drain-source On Resistance-Max :

0.4 Ω

Rds On (Max) @ Id, Vgs :

400m Ω @ 8A, 10V

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-263 (IXFA)

Mounting Type :

Surface Mount

Height :

4.83 mm

DS Breakdown Voltage-Min :

500 V

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Number of Pins :

3

ECCN Code :

EAR99

Published :

2006

FET Feature :

--

Tradename :

HiPerFET

Polarity/Channel Type :

N-Channel

Width :

9.65 mm

RoHS :

Details

Number of Terminals :

2

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

300 W

Number of Channels :

1 Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

16A

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+ 150 C

Mounting Style :

SMD/SMT

Packaging :

Tube

Base Product Number :

IXFA16

Power Dissipation (Max) :

300W (Tc)

Product Category :

MOSFET

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±30V

JESD-609 Code :

e3

Brand :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Fall Time (Typ) :

22 ns

Rise Time :

25ns

Power Dissipation :

300W

Turn-Off Delay Time :

70 ns

Threshold Voltage :

5.5V

Product Type :

MOSFET

Element Configuration :

Single

Configuration :

Single

Series :

HiPerFET™, PolarHT™

Drain Current-Max (Abs) (ID) :

16 A

Gate to Source Voltage (Vgs) :

30V

Length :

10.41 mm

Terminal Form :

THROUGH-HOLE

Pin Count :

4

Continuous Drain Current (ID) :

16A

Avalanche Energy Rating (Eas) :

750 mJ

Transistor Polarity :

N-Channel

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

500V

Number of Elements :

1

Mount :

Surface Mount

Terminal Position :

Single

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

500V

Package :

Tube

Drain to Source Breakdown Voltage :

500V