IRS2609DSPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Input Type :

Non-Inverting

Rise Time :

220ns

Resistance :

200Ohm

Number of Drivers :

2

RoHS Status :

RoHS Compliant

Operating Temperature :

-40°C~150°C TJ

Channel Type :

SYNCHRONOUS

Width :

3.9878mm

Radiation Hardening :

No

Number of Terminations :

8

Number of Functions :

1

Propagation Delay :

1.1 μs

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Power Dissipation :

625mW

Logic Voltage - VIL, VIH :

0.8V 2.2V

Packaging :

Tube

Number of Pins :

8

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Max Output Current :

350mA

Current - Peak Output (Source, Sink) :

200mA 350mA

Rise / Fall Time (Typ) :

150ns 50ns

Fall Time (Typ) :

80 ns

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Supply Voltage :

15V

Mounting Type :

Surface Mount

Base Part Number :

IRS2609DSPBF

Max Power Dissipation :

625mW

Terminal Position :

Dual

High Side Driver :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Voltage - Supply :

10V~20V

Nominal Supply Current :

2mA

Terminal Form :

Gull wing

Turn-Off Delay Time :

250 ns

Turn On Delay Time :

60 ns

High Side Voltage - Max (Bootstrap) :

600V

REACH SVHC :

No SVHC

Gate Type :

IGBT, N-Channel MOSFET

ECCN Code :

EAR99

Length :

5mm

Output Peak Current Limit-Nom :

0.2A

Mount :

Surface Mount

Height :

1.5mm

Turn Off Time :

0.4 μs

Number of Outputs :

1

JESD-609 Code :

e3

Output Voltage :

620V

Published :

1996

Output Current :

200mA

Driven Configuration :

Half-Bridge