IRS2004SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Rise / Fall Time (Typ) :

70ns 35ns

Gate Type :

IGBT, N-Channel MOSFET

Mounting Type :

Surface Mount

Length :

4.9784mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Width :

3.9878mm

Mount :

Surface Mount

High Side Voltage - Max (Bootstrap) :

200V

Channel Type :

SYNCHRONOUS

Turn On Delay Time :

680 ns

Height :

1.75mm

Max Output Voltage :

20V

Power Dissipation :

625mW

Fall Time (Typ) :

35 ns

Voltage - Supply :

10V~20V

Max Power Dissipation :

625mW

Operating Temperature :

-40°C~150°C TJ

Base Part Number :

IRS2004SPBF

Terminal Position :

Dual

Turn-Off Delay Time :

150 ns

Rise Time :

70ns

Termination :

SMD/SMT

Max Output Current :

600mA

Nominal Supply Current :

150μA

Max Supply Current :

270μA

Driven Configuration :

Half-Bridge

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Outputs :

2

Supply Voltage :

15V

Ambient Temperature Range High :

125°C

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Published :

1996

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Min Output Voltage :

10V

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Logic Voltage - VIL, VIH :

0.8V 2.5V

Built-in Protections :

TRANSIENT; UNDER VOLTAGE

Output Voltage :

220V

Number of Functions :

1

Input Type :

Non-Inverting

Number of Terminations :

8

Packaging :

Tube

Propagation Delay :

160 ns

Power Supplies :

15V

JESD-609 Code :

e3

Max Junction Temperature (Tj) :

150°C

Terminal Form :

Gull wing

Release Time :

150 ns

Number of Pins :

8

ECCN Code :

EAR99

Factory Lead Time :

15 Weeks

Output Current :

130mA

Current - Peak Output (Source, Sink) :

290mA 600mA