IRS2001PBF
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- Mfr.Part #
- IRS2001PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8DIP
- Stock
- 27,491
- In Stock ：
- 27,491
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 60 ns
- Package / Case :
- 8-DIP (0.300, 7.62mm)
- Rise Time :
- 100ns
- Operating Temperature :
- -40°C~150°C TJ
- Turn-Off Delay Time :
- 150 ns
- Release Time :
- 150 ns
- Number of Pins :
- 8
- Rise / Fall Time (Typ) :
- 70ns 35ns
- Peak Reflow Temperature (Cel) :
- 250
- Base Part Number :
- IRS2001PBF
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Length :
- 10.8966mm
- Turn On Delay Time :
- 160 ns
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Voltage - Supply :
- 10V~20V
- Power Supplies :
- 15V
- Output Voltage :
- 20V
- Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Current - Peak Output (Source, Sink) :
- 290mA 600mA
- Interface IC Type :
- BUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Driven Configuration :
- Half-Bridge
- Max Supply Current :
- 270μA
- Mount :
- Through Hole
- Width :
- 7.11mm
- Propagation Delay :
- 220 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Height :
- 4.9276mm
- Output Current :
- 130mA
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Number of Outputs :
- 2
- Published :
- 1996
- Input Type :
- Non-Inverting
- Number of Terminations :
- 8
- Supply Voltage :
- 15V
- Radiation Hardening :
- No
- Channel Type :
- Independent
- Built-in Protections :
- TRANSIENT; UNDER VOLTAGE
- Max Power Dissipation :
- 1W
- Nominal Supply Current :
- 270μA
- Terminal Position :
- Dual
- Gate Type :
- IGBT, N-Channel MOSFET
- High Side Voltage - Max (Bootstrap) :
- 200V
- Max Output Current :
- 600mA
- Number of Functions :
- 1
- Lead Free :
- Lead Free
- Logic Voltage - VIL, VIH :
- 0.8V 2.5V
- Datasheets
- IRS2001PBF
Gate Drivers Infineon Technologies IRS2001PBF Overview
The IRS2001PBF from Infineon Technologies is a cutting-edge gate driver designed for high-efficiency applications where half-bridge configurations are necessary. As a key component in modern electronic device circuitry, this IC (Integrated Circuit) specializes in driving both N-channel and P-channel power MOSFETs and IGBTs. The IRS2001PBF ensures reliable operation with its robust design that includes under-voltage lockout protection and matched propagation delays, which are critical for high-frequency operation. The capability to operate up to 600V enhances its utility in a wide range of power applications, making it an essential choice for developers looking to optimize performance and power management.
IRS2001PBF Features
- High-side and low-side gate driver for half-bridge configurations
- Operational up to 600V, suitable for various demanding environments
- Matched propagation delays for better switching performance
- Under-voltage lockout for both channels ensures stable operation
- 3.3V and 5V input logic compatible, facilitating integration with existing systems
IRS2001PBF Applications
- Motor Drives: Utilizes high-side and low-side driving to efficiently control motor speed and torque in industrial automation systems.
- Renewable Energy Systems: Ideal for solar inverters and wind turbine converters to manage power transfer and increase system efficiency.
- Uninterruptible Power Supplies (UPS): Ensures seamless switching between power sources and load management, critical in maintaining continuous power supply.
- Electric Vehicle (EV) Power Systems: Drives power conversion processes in electric vehicles, enhancing performance and reliability of EV powertrains.
- High-Efficiency Power Supplies: Utilized in server and telecom power systems for efficient power management and minimized energy loss.
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