IRS2607DSTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Gate Type :

IGBT, N-Channel MOSFET

JESD-609 Code :

e3

ECCN Code :

EAR99

Output Current :

200mA

Current - Peak Output (Source, Sink) :

200mA 350mA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation :

625mW

Turn On Delay Time :

50 ns

Rise / Fall Time (Typ) :

150ns 50ns

Propagation Delay :

715 ns

Number of Functions :

1

Mounting Type :

Surface Mount

Height :

1.4986mm

Supply Voltage :

15V

Max Power Dissipation :

625mW

Mount :

Surface Mount

Published :

1996

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Logic Voltage - VIL, VIH :

0.8V 2.2V

High Side Voltage - Max (Bootstrap) :

600V

Number of Drivers :

2

Operating Temperature :

-40°C~150°C TJ

Turn-Off Delay Time :

500 ns

Driven Configuration :

Half-Bridge

Width :

3.9878mm

Number of Pins :

8

Resistance :

200Ohm

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Rise Time :

220ns

Output Peak Current Limit-Nom :

0.2A

Turn Off Time :

0.7 µs

Qualification Status :

Not Qualified

Number of Outputs :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.9784mm

Channel Type :

Independent

Number of Terminations :

8

Interface IC Type :

FULL BRIDGE BASED MOSFET DRIVER

Terminal Position :

Dual

Terminal Form :

Gull wing

Voltage - Supply :

10V~20V

High Side Driver :

yes

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Base Part Number :

IRS2607DSPBF

Fall Time (Typ) :

80 ns

Input Type :

Non-Inverting

Max Output Current :

350mA