IRS21281STRPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Height :

1.4986mm

Turn On Delay Time :

150 ns

Number of Pins :

8

Resistance :

125Ohm

Number of Drivers :

1

Rise / Fall Time (Typ) :

80ns 40ns

Rise Time :

130ns

High Side Voltage - Max (Bootstrap) :

600V

Interface IC Type :

BUFFER OR INVERTER BASED MOSFET DRIVER

Channel Type :

Single

Propagation Delay :

200 ns

Input Type :

Inverting

Output Peak Current Limit-Nom :

0.6A

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

High Side Driver :

yes

ECCN Code :

EAR99

Current - Peak Output (Source, Sink) :

290mA 600mA

Turn On Time :

0.2 μs

Operating Temperature :

-40°C~150°C TJ

Number of Functions :

1

Number of Terminations :

8

Length :

4.9784mm

Gate Type :

IGBT, N-Channel MOSFET

Base Part Number :

IRS21281SPBF

Mounting Type :

Surface Mount

Output Current :

200mA

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Turn Off Time :

0.2 μs

Max Output Current :

600mA

Terminal Form :

Gull wing

Max Power Dissipation :

625mW

Published :

1996

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Nominal Supply Current :

120μA

Logic Voltage - VIL, VIH :

0.8V 2.5V

Peak Reflow Temperature (Cel) :

260

Supply Voltage :

15V

Mount :

Surface Mount

Radiation Hardening :

No

Turn-Off Delay Time :

150 ns

Packaging :

Tape and Reel (TR)

Power Dissipation :

625mW

Fall Time (Typ) :

65 ns

Driven Configuration :

High-Side

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

3.9878mm

RoHS Status :

RoHS Compliant

Voltage - Supply :

9V~20V

Max Supply Current :

120μA