IRS2127STRPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Length :

4.9784mm

Packaging :

Tape and Reel (TR)

Turn On Time :

0.2 μs

Number of Terminations :

8

High Side Driver :

yes

JESD-609 Code :

e3

Gate Type :

IGBT, N-Channel MOSFET

Ambient Temperature Range High :

125°C

Output Peak Current Limit-Nom :

0.6A

Rise Time :

80ns

Max Supply Current :

120μA

Nominal Supply Current :

60μA

Factory Lead Time :

12 Weeks

Power Dissipation :

625mW

Resistance :

125Ohm

Base Part Number :

IRS2127SPBF

Package / Case :

8-SOIC (0.154, 3.90mm Width)

High Side Voltage - Max (Bootstrap) :

600V

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Terminal Position :

Dual

Fall Time (Typ) :

40 ns

Mount :

Surface Mount

Voltage - Supply :

12V~20V

Turn Off Time :

0.2 μs

Mounting Type :

Surface Mount

Interface IC Type :

BUFFER OR INVERTER BASED MOSFET DRIVER

Width :

3.9878mm

Output Current :

200mA

Turn-Off Delay Time :

150 ns

Channel Type :

Single

Logic Voltage - VIL, VIH :

0.8V 2.5V

Terminal Form :

Gull wing

Max Power Dissipation :

625mW

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Published :

1996

Propagation Delay :

150 ns

Current - Peak Output (Source, Sink) :

290mA 600mA

Input Type :

Non-Inverting

Radiation Hardening :

No

Number of Functions :

1

Max Output Current :

600mA

Supply Voltage :

15V

Turn On Delay Time :

150 ns

Rise / Fall Time (Typ) :

80ns 40ns

Height :

1.75mm

ECCN Code :

EAR99

Number of Drivers :

1

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

-40°C~150°C TJ

Number of Pins :

8

Driven Configuration :

High-Side

RoHS Status :

ROHS3 Compliant