IRS2109PBF
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- Mfr.Part #
- IRS2109PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8DIP
- Stock
- 23,469
- In Stock ：
- 23,469
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Published :
- 1996
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Turn On Time :
- 0.95 μs
- Rise / Fall Time (Typ) :
- 100ns 35ns
- Output Current :
- 290mA
- Driven Configuration :
- Half-Bridge
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 1W
- Number of Outputs :
- 2
- Voltage - Supply :
- 10V~20V
- Channel Type :
- SYNCHRONOUS
- Number of Pins :
- 8
- Fall Time (Typ) :
- 80 ns
- Max Supply Current :
- 1.6mA
- Max Output Current :
- 600mA
- Number of Functions :
- 1
- Package / Case :
- 8-DIP (0.300, 7.62mm)
- Built-in Protections :
- TRANSIENT; UNDER VOLTAGE
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Current - Peak Output (Source, Sink) :
- 290mA 600mA
- Turn-Off Delay Time :
- 200 ns
- Power Supplies :
- 15V
- Width :
- 7.11mm
- Factory Lead Time :
- 12 Weeks
- Base Part Number :
- IRS2109PBF
- Height :
- 4.9276mm
- Number of Terminations :
- 8
- Packaging :
- Tube
- Logic Voltage - VIL, VIH :
- 0.8V 2.5V
- Input Type :
- Non-Inverting
- Propagation Delay :
- 950 ns
- Radiation Hardening :
- No
- Output Voltage :
- 20V
- Gate Type :
- IGBT, N-Channel MOSFET
- High Side Voltage - Max (Bootstrap) :
- 600V
- Power Dissipation :
- 1W
- Rise Time :
- 220ns
- ECCN Code :
- EAR99
- Operating Temperature :
- -40°C~150°C TJ
- Mount :
- Through Hole
- Turn On Delay Time :
- 750 ns
- Supply Voltage :
- 15V
- Length :
- 10.8966mm
- Nominal Supply Current :
- 1.6mA
- Datasheets
- IRS2109PBF
Gate Drivers Infineon Technologies IRS2109PBF Overview
The Infineon Technologies IRS2109PBF is a high-performance, Half-Bridge Gate Driver IC housed in an 8-pin DIP package. This IC is designed to drive N-channel MOSFETs and IGBTs in a half-bridge configuration, providing robust and efficient performance crucial for power management applications. The IRS2109PBF incorporates advanced features such as under-voltage lockout and matched propagation delay to enhance system reliability and performance. The compact and reliable design of the IRS2109PBF makes it an ideal choice for developing high-efficiency, space-sensitive power conversion applications, truly embodying the Gate Drivers Infineon Technologies IRS2109PBF characteristic.
IRS2109PBF Features
The IRS2109PBF offers a plethora of features tailored for efficient power management, including:
- Integrated high-voltage half-bridge gate driver
- Independent high and low driver channels with 540 and 480 mA drive currents respectively
- Under-voltage lockout for both channels ensures safe operation
- Matched propagation delays for better switching performance
- Cross-conduction prevention logic
- Operates up to 600V, catering to a wide range of power applications
- Shoot-through protection enhances the reliability of the device
IRS2109PBF Applications
- Inverter Systems
Enables efficient switching of power components in both residential and industrial inverters, ensuring reliable power conversion and management.
- Motor Drive Controllers
Drives high-power motors by effectively controlling the MOSFETs in applications ranging from electric vehicles to industrial automation systems.
- Switch Mode Power Supplies (SMPS)
Optimizes performance in power supplies by delivering precise control over high-speed switching operations, crucial for efficient energy conversion.
- Renewable Energy Systems
Facilitates the integration and management of renewable energy sources into power grids by driving the necessary power switching components in systems like solar inverters or wind turbine converters.
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