IRLR8743TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

21 ns

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Lead Free :

Lead Free

Nominal Vgs :

1.9 V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

135W

Number of Terminations :

2

Width :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

250 mJ

Fall Time (Typ) :

17 ns

Continuous Drain Current (ID) :

160A

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Turn On Delay Time :

19 ns

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

REACH SVHC :

No SVHC

Power Dissipation-Max :

135W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

12 Weeks

Rise Time :

35ns

Mounting Type :

Surface Mount

Resistance :

3.1mOhm

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Number of Pins :

3

Threshold Voltage :

1.9V

Input Capacitance (Ciss) (Max) @ Vds :

4880pF @ 15V

Pulsed Drain Current-Max (IDM) :

640A

Length :

6.7056mm

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

JESD-609 Code :

e3

FET Type :

N-Channel

JEDEC-95 Code :

TO-252AA

Series :

HEXFET®

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Height :

2.3876mm

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 25A, 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 4.5V

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier