IRLL3303TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

30V

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

10 Weeks

Power Dissipation :

2.1W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Rise Time :

22ns

Width :

3.7mm

Turn On Delay Time :

7.2 ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

4.6A

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G4

Published :

1999

REACH SVHC :

No SVHC

Terminal Position :

Dual

Power Dissipation-Max :

1W Ta

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Recovery Time :

98 ns

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

30V

Turn-Off Delay Time :

33 ns

Nominal Vgs :

1 V

Mounting Type :

Surface Mount

Current Rating :

4.6A

Lead Free :

Contains Lead, Lead Free

Resistance :

31mOhm

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

6.5A

Case Connection :

DRAIN

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

1V @ 250μA

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Fall Time (Typ) :

28 ns

Height :

1.8mm

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 25V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

Gate to Source Voltage (Vgs) :

16V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

31m Ω @ 4.6A, 10V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Length :

6.6802mm

Threshold Voltage :

1V