IRLL024NTRPBF
- Mfr.Part #
- IRLL024NTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 3.1A SOT223
- Stock
- 196,322
- In Stock :
- 196,322
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 25V
- Continuous Drain Current (ID) :
- 3.1A
- Vgs (Max) :
- ±16V
- Package / Case :
- TO-261-4, TO-261AA
- JESD-30 Code :
- R-PDSO-G4
- Voltage - Rated DC :
- 55V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 15.6nC @ 5V
- Published :
- 1999
- Number of Terminations :
- 4
- Number of Channels :
- 1
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Height :
- 1.8mm
- Case Connection :
- DRAIN
- Dual Supply Voltage :
- 55V
- Power Dissipation-Max :
- 1W Ta
- Max Junction Temperature (Tj) :
- 150°C
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 25 ns
- Manufacturer Package Identifier :
- IRLL024NTRPBF
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Ta
- Resistance :
- 65mOhm
- Number of Pins :
- 3
- Power Dissipation :
- 2.1W
- Turn On Delay Time :
- 7.4 ns
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Lead Free :
- Contains Lead, Lead Free
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 3.1A, 10V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 12 Weeks
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 18 ns
- Width :
- 3.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Recovery Time :
- 58 ns
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 16V
- REACH SVHC :
- No SVHC
- Current Rating :
- 3.1A
- Length :
- 6.6802mm
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 55V
- Series :
- HEXFET®
- Nominal Vgs :
- 2 V
- Threshold Voltage :
- 2V
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Rise Time :
- 21ns
- Mount :
- Surface Mount
- Datasheets
- IRLL024NTRPBF
IRLL024NTRPBF Documents

N-Channel Tape & Reel (TR) 65m Ω @ 3.1A, 10V ±16V 510pF @ 25V 15.6nC @ 5V TO-261-4, TO-261AA
Description
A HEXFET? Power MOSFET is the IRLL024NTRPBF. Advanced processing techniques are used in Fifth Generation HEXFETs to obtain extraordinarily low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.
The SOT-223 is a surface-mount package that may be soldered using vapor phase, infrared, or wave soldering processes. Its one-of-a-kind package design enables for effortless automatic pick-and-place, just like other SOT or SOIC packages, but with the extra benefit of increased thermal performance thanks to an expanded heat sinking tab. In a typical surface mount application, the power dissipation of 1.0W is attainable.
Features
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● Fully Avalanche Rated
● Fast Switching
● Surface Mount
● Advanced Process Technology
● Lead-Free
Applications
● In various radio and RF applications
● Transportation technology
● Automotive industry
● Power MOSFETs
● Consumer electronics
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