IRLL024NTRPBF

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Mfr.Part #
IRLL024NTRPBF
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 55V 3.1A SOT223
Stock
196,322
In Stock :
196,322

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
4V 10V
Number of Terminations :
4
FET Type :
N-Channel
Rise Time :
21ns
Radiation Hardening :
No
Dual Supply Voltage :
55V
Number of Elements :
1
Manufacturer Package Identifier :
IRLL024NTRPBF
Rds On (Max) @ Id, Vgs :
65m Ω @ 3.1A, 10V
Factory Lead Time :
12 Weeks
JESD-30 Code :
R-PDSO-G4
Transistor Element Material :
SILICON
Fall Time (Typ) :
25 ns
Drain to Source Breakdown Voltage :
55V
Power Dissipation :
2.1W
Series :
HEXFET®
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
15.6nC @ 5V
Current - Continuous Drain (Id) @ 25°C :
3.1A Ta
Terminal Position :
Dual
Published :
1999
REACH SVHC :
No SVHC
Power Dissipation-Max :
1W Ta
Transistor Application :
SWITCHING
Vgs (Max) :
±16V
Current Rating :
3.1A
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Resistance :
65mOhm
Terminal Form :
Gull wing
Length :
6.6802mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Lead Free :
Contains Lead, Lead Free
Max Junction Temperature (Tj) :
150°C
Threshold Voltage :
2V
Input Capacitance (Ciss) (Max) @ Vds :
510pF @ 25V
Case Connection :
DRAIN
Width :
3.7mm
Number of Channels :
1
Continuous Drain Current (ID) :
3.1A
Turn On Delay Time :
7.4 ns
Additional Feature :
AVALANCHE RATED, ULTRA LOW RESISTANCE
Vgs(th) (Max) @ Id :
2V @ 250μA
Mount :
Surface Mount
Turn-Off Delay Time :
18 ns
Nominal Vgs :
2 V
Mounting Type :
Surface Mount
Height :
1.8mm
Contact Plating :
Tin
Package / Case :
TO-261-4, TO-261AA
Gate to Source Voltage (Vgs) :
16V
Voltage - Rated DC :
55V
Recovery Time :
58 ns
Operating Temperature :
-55°C~150°C TJ
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRLL024NTRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Number of Pins:3, Number of Channels:1, Mounting Type:Surface Mount, Package / Case:TO-261-4, TO-261AA, Operating Temperature:-55°C~150°C TJ, IRLL024NTRPBF pinout, IRLL024NTRPBF datasheet PDF, IRLL024NTRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRLL024NTRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRLL024NTRPBF


N-Channel Tape & Reel (TR) 65m Ω @ 3.1A, 10V ±16V 510pF @ 25V 15.6nC @ 5V TO-261-4, TO-261AA

Description


A HEXFET? Power MOSFET is the IRLL024NTRPBF. Advanced processing techniques are used in Fifth Generation HEXFETs to obtain extraordinarily low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.

The SOT-223 is a surface-mount package that may be soldered using vapor phase, infrared, or wave soldering processes. Its one-of-a-kind package design enables for effortless automatic pick-and-place, just like other SOT or SOIC packages, but with the extra benefit of increased thermal performance thanks to an expanded heat sinking tab. In a typical surface mount application, the power dissipation of 1.0W is attainable.



Features


● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● Fully Avalanche Rated

● Fast Switching

● Surface Mount

● Advanced Process Technology

● Lead-Free



Applications


● In various radio and RF applications

● Transportation technology

● Automotive industry

● Power MOSFETs

● Consumer electronics


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