IRLL024NTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Continuous Drain Current (ID) :

3.1A

Vgs (Max) :

±16V

Package / Case :

TO-261-4, TO-261AA

JESD-30 Code :

R-PDSO-G4

Voltage - Rated DC :

55V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

15.6nC @ 5V

Published :

1999

Number of Terminations :

4

Number of Channels :

1

Number of Elements :

1

Terminal Position :

Dual

Height :

1.8mm

Case Connection :

DRAIN

Dual Supply Voltage :

55V

Power Dissipation-Max :

1W Ta

Max Junction Temperature (Tj) :

150°C

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Fall Time (Typ) :

25 ns

Manufacturer Package Identifier :

IRLL024NTRPBF

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Resistance :

65mOhm

Number of Pins :

3

Power Dissipation :

2.1W

Turn On Delay Time :

7.4 ns

Terminal Form :

Gull wing

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Lead Free :

Contains Lead, Lead Free

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.1A, 10V

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Turn-Off Delay Time :

18 ns

Width :

3.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

58 ns

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

16V

REACH SVHC :

No SVHC

Current Rating :

3.1A

Length :

6.6802mm

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

55V

Series :

HEXFET®

Nominal Vgs :

2 V

Threshold Voltage :

2V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Rise Time :

21ns

Mount :

Surface Mount