IRLL024NTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Number of Terminations :

4

FET Type :

N-Channel

Rise Time :

21ns

Radiation Hardening :

No

Dual Supply Voltage :

55V

Number of Elements :

1

Manufacturer Package Identifier :

IRLL024NTRPBF

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.1A, 10V

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

Fall Time (Typ) :

25 ns

Drain to Source Breakdown Voltage :

55V

Power Dissipation :

2.1W

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

15.6nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Terminal Position :

Dual

Published :

1999

REACH SVHC :

No SVHC

Power Dissipation-Max :

1W Ta

Transistor Application :

SWITCHING

Vgs (Max) :

±16V

Current Rating :

3.1A

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Resistance :

65mOhm

Terminal Form :

Gull wing

Length :

6.6802mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Lead Free :

Contains Lead, Lead Free

Max Junction Temperature (Tj) :

150°C

Threshold Voltage :

2V

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Case Connection :

DRAIN

Width :

3.7mm

Number of Channels :

1

Continuous Drain Current (ID) :

3.1A

Turn On Delay Time :

7.4 ns

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Vgs(th) (Max) @ Id :

2V @ 250μA

Mount :

Surface Mount

Turn-Off Delay Time :

18 ns

Nominal Vgs :

2 V

Mounting Type :

Surface Mount

Height :

1.8mm

Contact Plating :

Tin

Package / Case :

TO-261-4, TO-261AA

Gate to Source Voltage (Vgs) :

16V

Voltage - Rated DC :

55V

Recovery Time :

58 ns

Operating Temperature :

-55°C~150°C TJ