IRLL014TRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

60V

Vgs(th) (Max) @ Id :

2V @ 250μA

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.6A, 5V

Number of Elements :

1

JESD-30 Code :

R-PDSO-G3

Configuration :

SINGLE WITH BUILT-IN DIODE

Width :

3.7mm

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

26 ns

Package / Case :

TO-261-4, TO-261AA

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Resistance :

200mOhm

ECCN Code :

EAR99

Height :

1.8mm

Continuous Drain Current (ID) :

2.7A

Voltage :

55V

Length :

6.7mm

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

REACH SVHC :

Unknown

Power Dissipation-Max :

2W Ta 3.1W Tc

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 5V

Mounting Type :

Surface Mount

Pin Count :

4

Number of Terminations :

3

Number of Channels :

1

Turn-Off Delay Time :

17 ns

Gate to Source Voltage (Vgs) :

10V

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Rise Time :

110ns

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2011

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Mount :

Surface Mount

Power Dissipation :

2W

Additional Feature :

LOGIC LEVEL COMPATIBLE

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Current :

2A

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Turn On Delay Time :

9.3 ns

Threshold Voltage :

2V

Vgs (Max) :

±10V

Number of Pins :

4

Nominal Vgs :

1 V

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Case Connection :

DRAIN

Radiation Hardening :

No

Weight :

250.212891mg