IRLL014NTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±16V

Drain Current-Max (Abs) (ID) :

2A

Power Dissipation-Max :

1W Ta

Turn-Off Delay Time :

14 ns

Package / Case :

TO-261-4, TO-261AA

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

55V

Recovery Time :

61 ns

Gate to Source Voltage (Vgs) :

16V

Continuous Drain Current (ID) :

2A

Published :

1999

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Terminal Position :

Dual

Resistance :

200mOhm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

55V

Element Configuration :

Single

REACH SVHC :

No SVHC

Current Rating :

2A

Turn On Delay Time :

5.1 ns

Height :

1.4478mm

Radiation Hardening :

No

Transistor Application :

SWITCHING

Number of Pins :

3

Lead Free :

Lead Free

JESD-609 Code :

e3

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Nominal Vgs :

2 V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Case Connection :

DRAIN

Rise Time :

4.9ns

Threshold Voltage :

2V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Fall Time (Typ) :

2.9 ns

Number of Terminations :

4

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

JESD-30 Code :

R-PDSO-G4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.6802mm

ECCN Code :

EAR99

Power Dissipation :

2.1W

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

140m Ω @ 2A, 10V

Dual Supply Voltage :

55V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 250μA

Width :

3.7mm